Silicon Anti-Reflective Film Composition for Fine Pattern Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is the deterioration of photoresist film resolution and pattern collapse due to miniaturization, along with the lack of complete etching selectivity between the photoresist film and the substrate, necessitating a material and process that provides high dry-etching resistance and anti-reflective function for fine patterning.
Innovation Solution
A composition comprising a silicon-containing polymer, an organic polymer with hydroxy groups, and an organic solvent is used to form a silicon-containing anti-reflective film that exhibits excellent anti-reflective function and process selectivity in dry etching, preventing pattern collapse and ensuring accurate pattern transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the photoresist film is thinned to maintain resolution during miniaturization, then the resolution performance is improved, but the etching resistance is deteriorated
Solution Approach 1:
The patent divides the single-layer photoresist structure into a multilayer structure consisting of a lower photoresist layer and an upper photoresist layer. The lower photoresist layer provides etching resistance during substrate processing, while the upper photoresist layer maintains resolution performance. This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between thinning for resolution and maintaining etching resistance.
Solution Approach 2:
The patent uses composite material composition in the photoresist layers, specifically incorporating polymers with different properties in the lower and upper layers. The lower photoresist layer uses materials optimized for etching resistance, while the upper layer uses materials optimized for resolution and pattern formation. This composite approach enables simultaneous achievement of both etching resistance and resolution performance.
2Measurement precision
If the photoresist film thickness is reduced to improve resolution, then the resolution is improved, but pattern collapse occurs during development
Solution Approach 1:
The multilayer photoresist structure segments the functions of resolution and mechanical support. The upper photoresist layer is kept thin to maintain resolution, while the lower photoresist layer provides mechanical support and structural stability during development, preventing pattern collapse. This segmentation resolves the contradiction between thinning for resolution and maintaining pattern stability.
3Measurement precision
If the photoresist film is thinned for miniaturization, then the resolution is improved, but complete etching selectivity between photoresist and substrate cannot be achieved
Solution Approach 1:
The patent introduces an intermediate layer between the photoresist and substrate to segment the etching process into distinct stages with different selectivities. This intermediate layer enables complete etching selectivity by providing a barrier that allows selective removal of the photoresist while protecting the substrate, resolving the contradiction between thin photoresist for resolution and achieving complete etching selectivity.
4Measurement precision
If the photoresist composition is optimized for high resolution with shorter wavelength exposure, then the resolution is improved, but dry-etching resistance becomes weak
Solution Approach 1:
The patent employs composite materials with different polymer compositions in the lower and upper photoresist layers. The lower layer uses materials specifically selected for high dry-etching resistance to protect against etching damage, while the upper layer uses materials optimized for high resolution with shorter wavelength exposure. This composite material strategy resolves the contradiction between resolution optimization and dry-etching resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a silicon-containing anti-reflective film with high anti-reflective function and good process selectivity, allowing for the transfer of fine patterns onto substrates with reduced edge roughness and improved adhesiveness, thereby preventing pattern collapse and enhancing dry-etching resistance.
Implementation Method 1
A composition for forming a silicon-containing anti-reflective film... exhibits excellent anti-reflective function
Implementation Method 2
an organic polymer (B)... comprising no silicon... improved adhesiveness
Implementation Method 3
enhancing dry-etching resistance... good process selectivity in dry etching
Data Source
AI summary
The present invention is a composition for forming a silicon-containing anti-reflective film, including: a silicon-containing polymer (A); an organic polymer (B); and an organic solvent (C), wherein the silicon-containing polymer (A) includes any one selected from a polysiloxane, a polycarbosilane, and a polysilane, and the organic polymer (B) includes two or more hydroxy groups in a repeating unit structure of the polymer, and includes no silicon. This can provide: a composition for forming a silicon-containing anti-reflective film and a patterning method for forming a silicon-containing anti-reflective film that has both an excellent anti-reflective function and good process selectivity in dry etching in fine patterning process in the semiconductor device producing process.