Silicon Block Copolymer Self-Assembly for Lithography
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Solution Overview
Problem
Conventional lithographic techniques face limitations in achieving smaller pattern dimensions due to aberrations, focus issues, and wavelength constraints, making it difficult to further reduce feature sizes in microelectronic devices, while directed self-assembly of block copolymers offers enhanced resolution but requires high temperatures and specific processing conditions, especially for silicon-rich domains.
Innovation Solution
A novel block copolymer with a specific molar ratio of repeat units, capable of self-assembling at lower temperatures between 120°C and 250°C in air, allowing for the formation of silicon-rich and silicon-poor domains for pattern transfer without the need for solvent annealing or low oxygen environments, enabling the creation of finer patterns on substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used, then manufacturing process is simple, but pattern dimension reduction is limited due to aberrations, focus issues, and wavelength constraints
Solution Approach 1:
The patent changes the processing temperature parameter from high temperature (conventional requirement for silicon-rich BCP) to lower temperature range (120°C to 250°C), enabling self-assembly under milder conditions while maintaining pattern resolution. This parameter change resolves the contradiction by allowing enhanced manufacturing precision without requiring extreme processing conditions
Solution Approach 2:
The patent uses a composite block copolymer material containing silicon-rich domains (for etch resistance) and silicon-poor domains (for pattern formation). This composite material structure enables both high pattern precision and simplified processing conditions, as the silicon-rich blocks provide structural stability during self-assembly at lower temperatures
2Manufacturing precision
If directed self-assembly of block copolymers with silicon-rich domains is used, then resolution is enhanced, but high temperatures and low oxygen environments are required
Solution Approach 1:
The patent modifies the temperature parameter from high temperature processing to lower temperature range (120°C to 250°C) for self-assembly. This parameter change maintains the resolution enhancement benefits of silicon-rich block copolymers while eliminating the requirement for high temperature processing
Solution Approach 2:
The patent eliminates the requirement for low oxygen or inert gas environments by designing a block copolymer composition that is stable in air. The silicon-rich blocks provide sufficient thermal stability and oxidation resistance, allowing self-assembly to proceed in ambient conditions while maintaining high resolution
3Manufacturing precision
If directed self-assembly of block copolymers is used, then CD control is improved, but solvent annealing or specialized processing environments are required
Solution Approach 1:
The patent changes the processing conditions from requiring solvent annealing or specialized environments to simple thermal annealing in air at lower temperatures. This parameter change maintains improved CD control while significantly simplifying the manufacturing process
Solution Approach 2:
The patent uses a readily available block copolymer material that does not require expensive specialized processing equipment or controlled atmospheres. The material can be processed using standard semiconductor manufacturing equipment, making the process easier to manufacture while maintaining high CD control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of high-resolution patterns and pattern multiplication with improved line-edge roughness and CD control, facilitating the fabrication of smaller features in microelectronic devices without the need for high-temperature processing or specialized gas environments.
Implementation Method 1
directed self-assembly of block copolymers
Implementation Method 2
a diblock copolymer which is capable of microphase separation
Implementation Method 3
self-assembling at lower temperatures between 120°C and 250°C in air
Implementation Method 4
capable of forming blocks which are highly etchable... The plasma etch gases used in the etching process
Data Source
AI summary
The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n=1-6.The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.