Silicon-Containing Block Copolymer for Fine Pattern Formation
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Solution Overview
Problem
Current pattern-forming methods using block copolymers for miniaturization in electronic devices, such as semiconductor and liquid crystal devices, are limited by the insufficient fineness of patterns and the need for longer phase separation times, which hinders further microfabrication demands.
Innovation Solution
A composition comprising a block copolymer with a first block containing at least two silicon atoms and a second block without silicon atoms, where the atomic weight of the first block's repeating unit is no greater than 700, enabling directed self-assembly and phase separation for finer pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional block copolymers are used for pattern formation, then the phase separation structure can be formed, but the pattern fineness is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the block copolymer by introducing silicon atoms into the first block's repeating unit and controlling the atomic weight sum to be no greater than 700. This parameter modification enhances the phase separation characteristics, enabling finer pattern formation while maintaining manageable structural complexity
Solution Approach 2:
The patent creates a composite block copolymer structure combining a first block with silicon-containing repeating units and a second block with non-silicon repeating units. This composite structure leverages the contrasting properties of the two blocks to achieve superior phase separation and finer pattern resolution
2Manufacturing precision
If conventional block copolymers are used for pattern formation, then the phase separation structure can be formed, but the phase separation time is excessively long
Solution Approach 1:
The patent modifies the molecular weight and chemical composition parameters of the block copolymer by limiting the atomic weight sum of the first repeating unit to 700 or less and incorporating silicon atoms. These parameter changes enhance the thermodynamic driving force for phase separation, significantly reducing the required annealing time while achieving the desired pattern fineness
3Manufacturing precision
If the block copolymer structure is modified to achieve finer patterns, then the pattern fineness improves, but the coating properties deteriorate
Solution Approach 1:
The patent carefully controls the atomic weight sum of the first repeating unit to be no greater than 700, which balances the phase separation enhancement needed for fine patterns with the coating properties. This parameter optimization ensures that the modified block copolymer maintains adequate solubility and film-forming capabilities while achieving superior pattern resolution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of sufficiently fine patterns with appropriate phase separation times and coating properties, suitable for advanced lithography processes in electronic device manufacturing.
Implementation Method 1
a block copolymer which is capable of forming a phase separation structure through directed self-assembly
Implementation Method 2
annealing of a film formed from a composition containing the block copolymer results in a tendency of clustering of polymer structures having the same property, and thus a pattern can be formed in a self-aligning manner
Data Source
AI summary
A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.