Silicon Bridge Multi-Chip Packaging for High-Density Die Interconnects
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Solution Overview
Problem
Current multi-chip packages face challenges in achieving high die-to-die interconnect densities due to limitations in manufacturing organic substrates, leading to increased costs and reduced bandwidth capabilities.
Innovation Solution
The use of silicon bridges embedded in or attached to the package substrate, which eliminate the need for through-silicon vias and enable higher density interconnects by leveraging advanced silicon process technology, allowing for precise alignment and integration of dies with different designs and heights.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If organic substrates are used for multi-chip packages, then manufacturing is easier, but interconnect density is limited and costs increase
Solution Approach 1:
The patent introduces an active die as an intermediary component between two inactive dies. This active die contains conductive interconnect structures that enable high-density connections between the inactive dies, overcoming the interconnect density limitations of organic substrates while maintaining manufacturing feasibility
Solution Approach 2:
The invention creates a composite structure combining active and inactive dies with different functional properties. The active die provides conductive pathways while the inactive dies provide structural support and I/O interfaces, achieving high interconnect density through material and functional composition
2Length of moving object
If through-silicon vias are used for interconnects, then vertical connections are achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts the vertical connection function from the substrate and relocates it to the active die. By removing the need for through-silicon vias in the substrate and implementing conductive structures within the active die itself, the invention reduces manufacturing complexity while maintaining vertical interconnect capability
Solution Approach 2:
The invention uses standard silicon process technology to create conductive interconnect structures in the active die that replicate the functionality of through-silicon vias. This copying approach leverages existing manufacturing capabilities, reducing complexity and cost
3Quantity of substance
If die-to-die interconnect density is increased, then bandwidth capability improves, but manufacturing precision requirements increase
Solution Approach 1:
The active die serves itself by containing the conductive interconnect structures needed for high-density connections. This self-contained approach eliminates the need for precise alignment between separate substrates and dies, as the interconnect structures are integrated within the active die itself
Solution Approach 2:
The invention transitions from planar interconnects in the substrate to three-dimensional conductive structures within the active die. This dimensional change allows high interconnect density without proportionally increasing alignment precision requirements, as connections are established through vertical integration rather than lateral alignment
4Quantity of substance
If silicon bridges are used instead of organic substrates, then interconnect density and bandwidth improve, but manufacturing difficulty increases
Solution Approach 1:
The active die serves multiple functions: it provides structural support like a substrate, contains conductive interconnect structures for high-density connections, and offers I/O interfaces. This multi-functionality eliminates the need for separate organic substrates while achieving superior interconnect density using standard silicon manufacturing processes
Data Source
AI summary
A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).