Silicon Capacitor Noise Reduction in Semiconductor Devices

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Solution Overview

Problem

Semiconductor devices face challenges in reducing noise, particularly high-frequency noise, which can be transferred from logic circuits to power supplies and ground, affecting the reliability and performance of the devices.

Innovation Solution

Incorporating a silicon capacitor with specific electrode configurations and connections to the IC chip, allowing for efficient noise cancellation by repeated charging and discharging, and using inductors to further mitigate noise transfer through self-induction effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a capacitor is used to reduce noise, then noise reduction effectiveness is improved, but device complexity increases

Engineering Contradiction:
Improvenoise transferVSAvoiddevice complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent merges the capacitor with the IC chip by forming the capacitor electrodes and insulating film directly on the chip substrate, integrating noise reduction functionality into the existing chip structure rather than adding a separate component, thereby reducing device complexity while maintaining noise reduction effectiveness

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The IC chip substrate serves dual functions: as the circuit board for logic circuits and as the base for forming the capacitor structure. The insulating film on the substrate serves both as electrical insulation for the circuit and as part of the capacitor dielectric, enabling multi-functionality that reduces overall device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Object-affected harmful factors

If the capacitor is positioned close to the logic circuit, then noise reduction effectiveness is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvenoise transferVSAvoidpositioning precision
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The capacitor is segmented into multiple electrodes (first electrode, second electrode, third electrode, fourth electrode) formed in different regions of the substrate, with each electrode connected to specific power supply terminals. This segmentation allows the capacitor to be distributed across the chip area, maintaining proximity to noise-generating circuits while using standard manufacturing processes for each segment

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The capacitor structure utilizes the vertical dimension by forming insulating films and electrodes in multiple layers on the substrate surface. This three-dimensional arrangement allows the capacitor to occupy space above the logic circuit without requiring precise lateral positioning, effectively reducing manufacturing precision requirements while maintaining noise reduction effectiveness

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The silicon capacitor effectively reduces noise transfer from the IC chip to connected components, enhancing the reliability and performance of semiconductor devices by positioning it close to noise-generating logic circuits, while inductors complement this by preventing noise propagation through self-induction.

Implementation Method 1

The first silicon capacitor has a first electrode and a second electrode on a second surface facing the first surface. The first electrode is electrically connected to the first terminal through a first conductive member, and the second electrode is electrically connected to the second terminal through a second conductive member

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

using inductors to further mitigate noise transfer through self-induction effects

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS11705442B2Semiconductor device
Publication Date: 2023.07.18 KK TOSHIBA
  • US11705442B2 patent drawing
  • US11705442B2 patent drawing
  • US11705442B2 patent drawing

AI summary

According to one embodiment, a semiconductor device includes an integrated circuit (IC) chip and a silicon capacitor. The IC chip has a first terminal and a second terminal on a first surface. The silicon capacitor has a first electrode and a second electrode on a second surface facing the first surface. The first electrode is electrically connected to the first terminal through a first conductive member, and the second electrode is electrically connected to the second terminal through a second conductive member.