Silicon Capacitor Thermal Management in Semiconductor Packages

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Solution Overview

Problem

Semiconductor package structures face challenges in thermal management due to heat generation during operation, and decoupling capacitors used to mitigate power noise can hinder thermal conduction, necessitating improved thermal performance.

Innovation Solution

Incorporating a silicon capacitor with embedded capacitor cells and strategically positioned bump structures to enhance thermal conductivity, allowing efficient heat transfer from the semiconductor die to the substrate, while maintaining electrical coupling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If decoupling capacitors are used to prevent power noise fluctuations, then electrical stability is improved, but thermal conduction is blocked and thermal performance deteriorates

Engineering Contradiction:
Improveelectrical stabilityVSAvoidthermal performance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the material parameter of the capacitor from traditional ceramic materials to silicon-based materials, which have inherently higher thermal conductivity. This parameter change allows the capacitor to maintain its electrical decoupling function while simultaneously improving thermal conduction, thus resolving the contradiction between electrical stability and thermal performance

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures, specifically integrating silicon capacitors with copper heat spreaders and thermal vias in a multi-layer package substrate. This composite approach combines the electrical decoupling capability of silicon capacitors with the superior thermal conduction properties of copper, achieving both electrical stability and improved thermal management

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If semiconductor devices are miniaturized to perform more functions, then device functionality is improved, but thermal management becomes increasingly difficult

Engineering Contradiction:
Improvedevice functionalityVSAvoidthermal management
Core Design Contradiction:
Adaptability or versatilityVSTemperature

Solution Approach 1:

The patent transitions from planar heat dissipation to three-dimensional thermal management by implementing vertical thermal vias that conduct heat through the package substrate thickness, and by stacking multiple functional layers including silicon capacitors and copper heat spreaders. This dimensional approach allows efficient heat removal from miniaturized devices without compromising the compact form factor

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces copper heat spreaders and thermal via structures as intermediary thermal management components between the semiconductor die and the package substrate. These intermediaries provide dedicated thermal conduction pathways that separate the heat flow from the electrical signal paths, enabling effective thermal management in miniaturized multi-functional devices

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The silicon capacitor and bump structures improve thermal dissipation efficiency, addressing the thermal management challenges and power noise issues in semiconductor packages.

Implementation Method 1

The silicon capacitor and bump structures improve thermal dissipation efficiency, addressing the thermal management challenges

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

The first bump structure is disposed between the silicon capacitor and the substrate

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230011666A1Semiconductor package structure
Publication Date: 2023.01.12 MEDIATEK SINGAPORE PTE LTD
  • US20230011666A1 patent drawing
  • US20230011666A1 patent drawing
  • US20230011666A1 patent drawing

AI summary

A semiconductor package structure includes a substrate, a first redistribution layer, a semiconductor die, a silicon capacitor, and a first bump structure. The first redistribution layer is disposed over the substrate. The semiconductor die is disposed over the first redistribution layer. The silicon capacitor is disposed below the first redistribution layer and is electrically coupled to the semiconductor die, wherein the silicon capacitor includes a semiconductor substrate and a plurality of capacitor cells embedded in the semiconductor substrate. The first bump structure is disposed between the silicon capacitor and the substrate.