Low-Temperature Bonded Substrate Using Silicon Carbide Layers
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Solution Overview
Problem
Existing methods for bonding semiconductor substrates at low temperatures struggle to achieve high bonding strength, which is essential to prevent exfoliation during processing, especially when using copper wiring, as high-temperature dehydration condensation is not feasible.
Innovation Solution
Forming a bonded substrate by creating a first and second bonding layer with silicon carbide or silicon carbonitride on at least one of the layers, followed by a heat treatment to enhance bonding strength without exceeding the heat-resistant temperature of materials like copper.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high-temperature heat treatment is used for dehydration condensation bonding, then bonding strength is improved, but it exceeds the heat-resistant temperature of copper wiring
Solution Approach 1:
The patent changes the chemical composition parameter of the bonding layer from conventional silicon oxide to silicon carbide or silicon carbonitride. This material substitution enables effective dehydration condensation bonding at lower temperatures (400-600°C) while achieving bonding strength comparable to or exceeding that of high-temperature processes, thus resolving the contradiction between bonding strength and temperature constraints for copper wiring
Solution Approach 2:
The patent employs composite material strategy by forming a bonding layer with specific composition (silicon carbide or silicon carbonitride) that combines the advantages of both silicon oxide (dehydration condensation capability) and silicon carbide (thermal stability). This composite approach enables low-temperature processing while maintaining high bonding strength, solving the temperature-strength contradiction
2Temperature
If low-temperature bonding is used to protect copper wiring, then heat-resistant temperature constraint is satisfied, but bonding strength becomes insufficient
Solution Approach 1:
The patent changes the chemical composition parameter of the bonding layer to silicon carbide or silicon carbonitride, which have different thermal and chemical properties compared to conventional silicon oxide. This parameter change enables the bonding process to proceed effectively at lower temperatures (400-600°C) while achieving sufficient bonding strength, thus resolving the contradiction between temperature constraints and bonding strength requirements
3Temperature
If adhesive bonding is used for low-temperature bonding, then bonding temperature is reduced, but heat-resistant temperature and chemical durability are compromised
Solution Approach 1:
The patent introduces a specifically designed bonding layer (silicon carbide or silicon carbonitride) as an intermediary between the semiconductor substrates. This intermediary layer enables direct bonding through dehydration condensation at low temperatures without requiring organic adhesives, thus achieving both low processing temperature and high chemical durability, resolving the contradiction between temperature reduction and reliability maintenance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for high bonding strength at low temperatures, preventing exfoliation and ensuring reliable semiconductor substrate bonding, even with copper wiring, by increasing the density of Si—O—Si bonds through surface modification and dehydration condensation.
Implementation Method 1
a heat treatment for bonding the first bonding layer and the second bonding layer to each other
Implementation Method 2
increasing the density of Si—O—Si bonds through surface modification and dehydration condensation
Data Source
AI summary
Disclosed herein is a method of manufacturing a bonded substrate, including the steps of: forming a first bonding layer on a surface on one side of a semiconductor substrate; forming a second bonding layer on a surface on one side of a support substrate; adhering the first bonding layer and the second bonding layer to each other; a heat treatment for bonding the first bonding layer and the second bonding layer to each other; and thinning the semiconductor substrate from a surface on the other side of the semiconductor substrate to form a semiconductor layer.