Silicon Carbide Layer Deposition for Void-Free Feature Filling
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Solution Overview
Problem
Existing methods for filling features on a substrate surface with silicon carbide face issues such as void formation and are relatively slow and expensive, particularly as feature sizes decrease.
Innovation Solution
A method involving low plasma power density (less than 3.0 W/cm²) and use of precursors with a carbon-carbon triple bond to form a silicon carbide layer, allowing the precursor to survive plasma and bond to the substrate surface, with a substrate temperature below 120°C, facilitating fast and cost-effective deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma atomic layer deposition is used to deposit silicon carbide material, then the material can be deposited, but voids form within the deposited material particularly within gaps on the substrate surface
Solution Approach 1:
The patent changes the plasma power density parameter from conventional high levels to less than 3.0 W/cm², and controls substrate temperature below 120°C. These parameter changes allow precursor molecules to survive plasma exposure and bond to the substrate surface, forming a dense, void-free silicon carbide layer that conforms to the substrate topology including within gaps and trenches.
2Manufacturing precision
If conventional plasma deposition techniques are used, then silicon carbide can be deposited, but the process is relatively slow and expensive
Solution Approach 1:
The patent employs plasma-enhanced chemical vapor deposition with plasma power density less than 3.0 W/cm², which enables faster deposition rates compared to conventional plasma atomic layer deposition. The process uses precursors containing carbon-carbon triple bonds at substrate temperatures below 120°C, achieving both high deposition speed and cost effectiveness while maintaining material quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves void-free filling of features with silicon carbide, enhancing the efficiency and reducing costs by using plasma-enhanced chemical vapor deposition.
Implementation Method 1
applying plasma power to form a plasma within the reaction chamber
Implementation Method 2
the method can be performed as a plasma-enhanced chemical vapor deposition method
Data Source
AI summary
Methods and systems for forming a structure including a silicon carbide layer and structures formed using the methods and systems are disclosed. Exemplary methods include providing a silicon carbide precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially flowable, viscous silicon carbide material on a surface of the substrate, wherein the initially viscous carbon material becomes the silicon carbide layer. Exemplary methods can include use of a silicon carbide precursor that includes a carbon-carbon triple bond and/or use of a relatively low plasma power density (e.g., less than 3 W/cm2).