Crystalline Silicon Solar Cell Through-Hole Passivation Contacts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The high series resistance and unsatisfactory photoelectric conversion efficiency of crystalline silicon solar cells are primarily due to ineffective carrier transmission through the passivation tunneling layer, which is exacerbated by minority carrier recombination at the surface of the crystalline silicon substrate.
Innovation Solution
Incorporating through holes in the passivation layer allows direct contact between the carrier collection layer and the crystalline silicon substrate, enhancing carrier transmission and reducing series resistance while maintaining effective passivation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a passivation tunneling layer is used to passivate the surface of the crystalline silicon substrate, then the recombination rate of minority carriers is reduced, but the carrier transmission effectiveness deteriorates resulting in high series resistance
Solution Approach 1:
The passivation layer is segmented by introducing through holes that divide the continuous passivation structure into separate regions. This allows the passivation function to be maintained in the surrounding material while creating direct transmission pathways through the holes, resolving the contradiction between passivation effectiveness and carrier transmission.
Solution Approach 2:
The passivation layer is given different properties in different regions: the main body maintains passivation properties to reduce recombination, while the through hole regions provide high conductivity pathways for carrier transmission. This local differentiation allows simultaneous optimization of both passivation and transmission functions.
2Reliability
If a passivation tunneling layer is used to passivate the surface of the crystalline silicon substrate, then the recombination rate of minority carriers is reduced, but the photoelectric conversion efficiency deteriorates due to high series resistance
Solution Approach 1:
By segmenting the passivation layer with through holes, the patent creates multiple parallel pathways for carrier collection. This maintains the passivation benefit while reducing the resistance barrier to carrier extraction, thereby improving photoelectric conversion efficiency without sacrificing passivation effectiveness.
Solution Approach 2:
The contact structure becomes a composite system combining the passivation layer material with the through hole void spaces and carrier collection layer. This composite structure enables both passivation and efficient carrier transmission simultaneously, resolving the efficiency limitation of the original single-structure approach.
3Reliability
If the passivation tunneling layer is made thicker to improve passivation, then the surface passivation effect is enhanced, but the carrier transmission capability deteriorates
Solution Approach 1:
Introducing through holes segments the thick passivation layer into multiple thinner sections separated by conductive pathways. This allows the main passivation body to remain thick for effective passivation while the through holes provide low-resistance transmission routes, decoupling the thickness-passivation relationship.
Solution Approach 2:
The through holes act as intermediary structures that bridge the gap between the thick passivation layer and the carrier collection layer. They mediate the contradiction by providing dedicated transmission pathways that bypass the resistive path through the entire passivation layer thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves the photoelectric conversion efficiency of crystalline silicon solar cells by increasing open circuit voltage, short circuit current, and fill factor, thereby enhancing overall performance.
Implementation Method 1
provide a passivation structure between the surface of the crystalline silicon substrate and the electrode to passivate the surface of the crystalline silicon substrate, so as to reduce the recombination rate of minority carriers on the surface
Implementation Method 2
the carrier collection layer comes into contact with the crystalline silicon substrate via the through hole on the passivation layer... carriers can pass through the interface between the crystalline silicon substrate and the carrier collection layer
Implementation Method 3
Photovoltaic power generation is a power generation method of converting solar energy into electrical energy by using large-area P-N junction diodes
Data Source
Figure 1~3b
Figure 4a~5
Figure 6~7
AI summary
The present disclosure relates to the technical field of solar cells, and relates to a crystalline silicon solar cell and a preparation method thereof, and a photovoltaic module. The crystalline silicon solar cell comprises a crystalline silicon substrate, a passivation layer that is disposed on the crystalline silicon substrate and that is provided with through holes, a carrier collection layer that is disposed on the passivation layer, and electrodes that contact the carrier collection layer; the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. In the described crystalline silicon solar cell, through holes are provided on the passivation layer, and the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. On the basis of ensuring a good surface passivation effect, carriers may pass through interfaces at which the crystalline silicon substrate and the carrier collection layer contact and be collected by the electrodes, thereby achieving more effective carrier transmission, reducing the series resistance of the crystalline silicon solar cell, improving the fill factor of the crystalline silicon solar cell, and improving the photo-electric conversion efficiency of the crystalline silicon solar cell.