III-V on Silicon Semiconductor Structure for Charge Barrier Control
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Solution Overview
Problem
The use of group III-V compound semiconductors with GaP as a buffer layer in semiconductor elements leads to a barrier in charge movement due to a difference in bandgap, inhibiting carrier movement between layers.
Innovation Solution
A semiconductor element with a silicon substrate, a first compound semiconductor layer (containing Ga and P) as a buffer, and a second compound semiconductor layer (containing Ga, As, and N) is designed, where the first layer controls charge movement between the substrate and the second layer through an electrode, reducing the barrier by applying a control voltage and maintaining a thin film thickness to facilitate tunneling effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If GaP is used as a buffer layer between silicon substrate and group III-V compound semiconductor, then lattice mismatch is reduced, but charge movement is inhibited due to bandgap difference
Solution Approach 1:
An electrode is introduced as an intermediary component between the silicon substrate and the compound semiconductor layer. This electrode applies an external electric field that acts as a mediator to facilitate charge carrier movement across the GaP buffer layer, overcoming the energy barrier created by the bandgap difference while preserving the lattice matching benefits of the GaP layer.
Solution Approach 2:
The energy barrier for charge movement is dynamically changed by applying an external voltage through the electrode. By adjusting the electrical parameter (voltage), the effective potential barrier that charges must overcome is modified, enabling controlled charge transport through the GaP layer without changing the physical structure or material composition.
2Adaptability or versatility
If group III-V compound semiconductor is grown on silicon substrate, then heterostructure is formed, but crystal defects increase due to lattice constant difference
Solution Approach 1:
The GaP buffer layer serves as an intermediary material between silicon and group III-V compound semiconductors. It provides a gradual transition in lattice constants, reducing the abrupt mismatch that would otherwise cause extensive crystal defects. The layer acts as a buffer zone that mediates the structural transition.
Solution Approach 2:
A composite layered structure is formed combining silicon substrate, GaP buffer layer, and group III-V compound semiconductor layer. This composite approach allows each layer to contribute its advantageous properties while mitigating the disadvantages of direct interfaces, creating a heterostructure with improved overall crystal quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances charge movement between the silicon substrate and the second compound semiconductor layer, improving the efficiency of photoelectric conversion and light emission by reducing the energy barrier caused by the bandgap difference.
Implementation Method 1
an electrode that is disposed on the silicon substrate and controls movement of charges between the silicon substrate and the second compound semiconductor layer via the first compound semiconductor layer
Data Source
AI summary
Inhibition of movement of charges in a semiconductor element formed by growing a group III-V compound semiconductor layer on a silicon substrate is prevented. The semiconductor element includes a silicon substrate, a first compound semiconductor layer, a second compound semiconductor layer, and an electrode. The first compound semiconductor layer is formed on the silicon substrate. The second compound semiconductor layer is stacked on the first compound semiconductor layer. The electrode is disposed on the silicon substrate and controls movement of charges between the silicon substrate and the second compound semiconductor layer via the first compound semiconductor layer.