Silicon Chamber Member Coating to Cut RF Loss in Plasma Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In plasma processing apparatuses using silicon-containing materials, there is a significant loss of radio-frequency power due to the higher resistance of these materials, leading to increased particle generation and inefficiencies in plasma generation.
Innovation Solution
A conductive film made of a conductive material, such as aluminum or graphene, is formed on the second surface of silicon members opposite to the plasma processing space, reducing the total resistance and enhancing current flow, thereby minimizing RF power loss and particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If silicon-containing materials are used for chamber components facing plasma processing space, then particle generation is suppressed, but radio-frequency power loss increases
Solution Approach 1:
The invention applies a composite material structure by combining silicon-containing material (for particle suppression) with a conductive film layer (for reduced RF power loss). The conductive film is formed on the silicon-containing material, creating a composite component that simultaneously achieves both particle suppression and reduced energy loss.
Solution Approach 2:
The conductive film is applied locally to specific surfaces of silicon-containing materials that are exposed to plasma or subjected to RF power, rather than changing the entire component. This localized treatment addresses the RF power loss issue only where needed, while maintaining the particle-suppressing properties of silicon-containing materials in plasma-exposed areas.
2Reliability
If silicon-containing materials are used for chamber components, then plasma processing is enabled with particle suppression, but resistance increases leading to inefficiencies
Solution Approach 1:
The conductive film forms a composite structure with the silicon-containing material, creating a component that maintains the plasma-compatible and particle-suppressing properties of silicon while adding the electrical conductivity needed to reduce power loss and improve efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a conductive film on silicon members in plasma processing apparatuses effectively reduces RF power loss and suppresses particle generation, improving plasma processing efficiency and reducing the occurrence of abnormal discharges.
Implementation Method 1
A conductive film made of a conductive material, such as aluminum or graphene, is formed on the second surface of silicon members opposite to the plasma processing space, reducing the total resistance and enhancing current flow
Implementation Method 2
The power source supplies radio-frequency power for generating plasma in the plasma processing space
Data Source
AI summary
A plasma processing apparatus includes a chamber, a power source, a silicon member, and a conductive film. The chamber provides a plasma processing space. The power source supplies radio-frequency power for generating plasma in the plasma processing space. The silicon member is made of a silicon-containing material, is disposed in the chamber, and has a first surface facing the plasma processing space. The conductive film is made of a conductive material and formed on a second surface that does not face the plasma processing space of the silicon member.