Silicon-Containing Connection Layer for Nitride Semiconductor Contact Resistance
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Solution Overview
Problem
Nitride semiconductor devices with electrodes on the back surface face high contact resistance issues, leading to increased operating voltage and unstable electric characteristics due to reactions during thermal treatment, hindering miniaturization and high-power output.
Innovation Solution
A connection layer composed of silicon-containing materials is formed between the nitride semiconductor substrate and the metal electrode, preventing reactions and maintaining low contact resistance even after thermal treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a metal electrode is formed directly on the back surface of the nitride semiconductor substrate, then the manufacturing process is simple, but the contact resistance between the electrode and substrate is high
Solution Approach 1:
A connection layer composed of silicon-containing material is introduced between the metal electrode and the nitride semiconductor substrate. This intermediary layer prevents direct contact and harmful reactions between the metal electrode and substrate, while maintaining low contact resistance through its favorable electrical properties.
Solution Approach 2:
The connection layer is formed from a composite material containing silicon, which combines the benefits of low contact resistance with resistance to thermal treatment. This composite material structure allows the device to maintain stable electrical characteristics after thermal processing.
2Productivity
If thermal treatment is performed after forming the n-electrode on the back surface, then the manufacturing process is completed, but the contact resistance increases due to reactions at the interface
Solution Approach 1:
The silicon-containing connection layer serves as a protective intermediary that prevents harmful reactions between the metal electrode and nitride substrate during thermal treatment. This intermediary layer remains stable under thermal conditions, preventing interface degradation and maintaining low contact resistance.
Solution Approach 2:
The connection layer creates an inert environment between the metal electrode and substrate, preventing oxidative or other harmful reactions during thermal treatment. This protective barrier ensures the interface remains chemically stable throughout the manufacturing process.
3Adaptability or versatility
If two electrodes are formed on the front surface of the substrate, then the device structure is conventional, but the device formation area is about two times larger than necessary
Solution Approach 1:
The invention moves one electrode from the front surface to the back surface of the substrate, utilizing the third dimension (depth/vertical positioning) to reduce the planar area required. By forming the n-electrode on the back surface, the device footprint is significantly reduced while maintaining all necessary electrical connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Stable and reduced contact resistance is achieved, reducing operating voltage and heat generation, enabling stable and high-power output for nitride semiconductor devices.
Implementation Method 1
when a thermal treatment is performed after the formation of the n-electrode, the reaction between the GaN layer surface and the n-electrode progresses
Data Source
AI summary
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.