Silicon-Containing Protective Film for Transparent Electrode Patterning
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Solution Overview
Problem
The challenge in semiconductor substrate fabrication is the damage caused by dry etching or wet etching processes during the patterning of semiconductor substrates, particularly when removing resist underlayer films, which can impair the substrate's transparency and integrity, especially when dealing with transparent electrodes like ITO.
Innovation Solution
A method involving the formation of a silicon-containing composition film as a protective layer on the substrate, followed by a polysilane-polysiloxane resin precursor treatment, which inhibits post-development residue generation and facilitates a patterning process that preserves the substrate's transparency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If dry etching or wet etching is used to remove resist underlayer films, then the patterning process can be completed, but the substrate (especially transparent electrodes like ITO) suffers damage and transparency is impaired
Solution Approach 1:
A silicon-containing composition film is introduced as an intermediary protective layer between the resist underlayer and the transparent electrode substrate. This film acts as a mediator that allows the etching process to remove the resist underlayer while preventing direct contact between the etchant and the transparent electrode, thus avoiding substrate damage and maintaining transparency.
Solution Approach 2:
The silicon-containing composition film is formed on the transparent electrode before the resist underlayer deposition and etching process. This preliminary protective coating ensures that when subsequent etching occurs, the substrate is already protected, preventing transparency impairment before it can occur.
2Object-affected harmful factors
If a protective layer is formed on the substrate, then substrate transparency and integrity are preserved, but the process complexity increases
Solution Approach 1:
The silicon-containing composition film can be removed by changing the chemical parameters of the development solution (using specific solvents that selectively dissolve the silicon-containing film). This parameter-based removal method simplifies the overall process by enabling selective removal without mechanical or complex chemical interventions.
Solution Approach 2:
The silicon-containing composition film serves as a temporary, disposable protective layer that is easily removed after serving its protective function. This disposable nature reduces the need for complex permanent protective structures or intricate removal processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents post-development residue formation, ensuring the transparency and integrity of the substrate during the patterning process, thereby enhancing the reliability and quality of semiconductor devices.
Implementation Method 1
a step of forming a film of a silicon-containing composition on a support equipped with an electrode
Data Source
AI summary
A method of pattern formation. The method is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation. The method of pattern formation includes forming a film of a silicon-containing composition on the support equipped with an electrode forming a film of a resin composition on the film of a silicon-containing composition, and forming the film of a resin composition into a pattern.