Silicon-Containing Underlayer Film for Semiconductor Patterning
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Solution Overview
Problem
Conventional silicon-containing resist underlayer films in semiconductor manufacturing face challenges with dry etching and hydrofluoric acid-based removal processes, which can damage substrates and result in low yield and high retry rates, especially when using double patterning techniques.
Innovation Solution
A composition forming a coating type silicon-containing film with silicic acid and silicon skeletal structures, incorporating polysilane structures and specific molecular weight ranges, that offers excellent adhesiveness and can be easily wet etched with alkaline solutions without damaging semiconductor substrates or carbon-based films, thereby improving pattern transfer and reducing substrate damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon-containing resist underlayer films are used with dry etching or hydrofluoric acid removal processes, then pattern transfer can be achieved, but substrate damage occurs and yield decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the silicon-containing film by incorporating specific silicic acid skeletal structures with controlled molecular weights and silicon content (5-30 mass%). This allows the film to be selectively removed by alkaline solutions instead of requiring dry etching or hydrofluoric acid, thereby preventing substrate damage while maintaining pattern transfer quality
Solution Approach 2:
The invention creates a composite material system combining silicic acid skeletal structures with specific organic groups (such as phenolic resin, naphtholic resin, or cresolic resin components). This composite structure provides both the necessary adhesion for pattern transfer and the selective removability by alkaline solutions, resolving the contradiction between pattern transfer quality and substrate damage
2Manufacturing precision
If double patterning technology is used to achieve finer work sizes, then resolution limit is exceeded, but retry rates increase and yield decreases
Solution Approach 1:
The patent optimizes the molecular weight distribution and silicon content parameters of the silicic acid skeletal structure to create a film with controlled etch resistance and adhesion properties. This allows successful first-time patterning in double patterning processes, reducing retry rates and improving yield while maintaining the fine resolution capability
Solution Approach 2:
The silicon-containing underlayer film is designed as a temporary, disposable structure that serves its purpose during pattern transfer and is then completely removed by alkaline solutions without requiring costly retry processes. The film's controlled decomposition behavior ensures clean removal without substrate damage
3Manufacturing precision
If silicon-containing films are made highly adhesive for fine patterns, then pattern transfer improves, but removal difficulty increases
Solution Approach 1:
The patent creates local quality differentiation within the silicon-containing film by incorporating silicic acid skeletal structures that provide strong adhesion to the substrate while simultaneously containing alkaline-soluble groups. This allows the film to exhibit contrasting properties: high adhesion in the bulk structure for pattern transfer, but high removability when exposed to alkaline solutions
Solution Approach 2:
The silicic acid skeletal structure acts as an intermediary between the substrate and the resist pattern, providing strong binding during the patterning process while also serving as a bridge to alkaline solutions for subsequent removal. The structure's dual chemical reactivity enables both adhesion and controlled decomposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables efficient and damage-free wet etching of silicon-containing films, enhancing pattern transfer and reducing substrate damage, while maintaining excellent adhesiveness and etching selectivity, thus improving the semiconductor patterning process.
Implementation Method 1
one or more silicic acid skeletal structures represented by formula (1) and one or more silicon skeletal structures represented by formula (2) wherein the composition contains a coupling between units in formula (2)
Implementation Method 2
can be easily wet etched with alkaline solutions without damaging semiconductor substrates or carbon-based films
Data Source
AI summary
A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.