Silicon-Containing Diblock Copolymer Self-Assembly for Sub-10 nm Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional lithographic techniques face limitations in achieving feature sizes below 10 nm due to aberrations, focus issues, and wavelength constraints, while existing block copolymers for directed self-assembly struggle with etch-induced degradation and require complex orientation control methods for perpendicularly oriented domain patterns.
Innovation Solution
A high-chi silicon-containing diblock copolymer with a fluorinated surface-active linking group that self-assembles to form perpendicularly oriented lamellae or cylindrical domain patterns without the need for external orientation control agents or pre-patterned substrates, enabling thermal annealing to achieve domain patterns with improved critical dimension uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used, then feature sizes can be manufactured with existing processes, but feature sizes below 10 nm cannot be achieved due to aberrations, focus limitations, and wavelength constraints
Solution Approach 1:
The patent uses block copolymers as intermediary materials that self-assemble into nanoscale patterns. The copolymer consists of two immiscible blocks that spontaneously organize into periodic domain structures with pitches below 10 nm, serving as a mediator between conventional lithography and the final nanoscale features
Solution Approach 2:
The block copolymer system performs self-assembly and self-alignment without requiring complex external control mechanisms. The immiscible blocks automatically phase-separate and organize into ordered domains through thermodynamic driving forces, eliminating the need for precise external alignment procedures
2Manufacturing precision
If existing block copolymers are used for directed self-assembly, then sub-10 nm patterns can be formed, but etch-induced degradation occurs and complex orientation control methods are required
Solution Approach 1:
The patent incorporates silicon atoms specifically at the domain interfaces and in one of the blocks to provide localized etch resistance. This creates a gradient of etch resistance throughout the copolymer structure, with higher resistance at critical interface regions while maintaining the self-assembly properties of the bulk material
Solution Approach 2:
The patent creates a composite block copolymer system combining organic polymer blocks with inorganic silicon-containing segments. This composite structure provides both the self-assembly capability of organic polymers and the etch resistance of silicon, enabling reliable pattern transfer
3Manufacturing precision
If existing block copolymers are used for directed self-assembly, then sub-10 nm patterns can be formed, but perpendicularly oriented domain patterns require complex orientation control agents or pre-patterned substrates
Solution Approach 1:
The silicon-containing block copolymer spontaneously generates perpendicular orientation through intrinsic interactions between the silicon segments and the substrate or underlying layers. This self-orientation mechanism eliminates the need for external orientation control agents, pre-patterned substrates, or complex alignment procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diblock copolymer achieves self-assembled domain patterns with pitches less than 10 nm and maintains dimensional uniformity upon selective etching, overcoming the limitations of conventional lithography and simplifying the self-assembly process.
Implementation Method 1
enabling thermal annealing to achieve domain patterns with improved critical dimension uniformity
Implementation Method 2
Thin film layers of the diblock copolymers are capable of self-assembling to form perpendicularly oriented lamellae and/or cylindrical domain patterns
Data Source
AI summary
A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L′ in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.