Silicon Diode Logic-in-Memory for Stable CMOS In-Memory Computing
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Solution Overview
Problem
Existing von Neumann-based computer systems face bottlenecks due to the separation of processor and memory, leading to inefficiencies in data processing speed, power consumption, and integration, particularly in data-intensive applications like 5G communication and AI, and conventional Logic-In-Memory technologies using ReRAM face stability and usability issues in CMOS processes.
Innovation Solution
A stateful Logic-In-Memory (LIM) technology utilizing silicon diodes with a positive feedback loop, operating as two terminals, is implemented in a CMOS process, enabling both memory and logic operations with improved uniformity and stability, using silicon diodes with p-n-p-n structure and electrostatic doping for channel regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If von Neumann-based system with separated processor and memory is used, then system integration is improved, but power consumption increases and data transfer time increases
Solution Approach 1:
The patent combines memory and logic operations into a single integrated structure using silicon diodes that can perform both functions. The diode-based memory cell incorporates logic operation capabilities directly within the memory array, eliminating the need for separate processor and memory components, thus reducing power consumption while maintaining system integration.
Solution Approach 2:
The silicon diode structure is designed to serve multiple functions simultaneously - it acts as both a memory storage element and a logic operation unit. This multi-functionality allows the same hardware component to perform both data storage and computational tasks, reducing the overall system complexity and power requirements.
2Device complexity
If von Neumann-based system with separated processor and memory is used, then system integration is improved, but data transfer time increases
Solution Approach 1:
By merging memory and logic operations into the same silicon diode-based structure, the patent eliminates the physical separation between processor and memory. This allows data to be processed in-place without requiring transfer through external buses, significantly reducing data transfer time while maintaining high system integration.
3Adaptability or versatility
If ReRAM-based Logic-In-Memory is used, then memory and logic functions are combined, but device uniformity deteriorates and stability deteriorates
Solution Approach 1:
The patent transitions from ReRAM technology to silicon diode-based technology, changing the fundamental material and operational parameters. Silicon diodes operate based on well-established p-n junction physics with predictable characteristics, providing superior device uniformity and stability compared to emerging ReRAM technologies while maintaining the ability to perform both memory and logic functions.
4Adaptability or versatility
If ReRAM-based Logic-In-Memory is used, then memory and logic functions are combined, but manufacturing precision deteriorates
Solution Approach 1:
By changing from ReRAM to silicon diode technology, the patent leverages mature CMOS-compatible fabrication processes. Silicon diodes can be manufactured with high precision using standard semiconductor manufacturing techniques, ensuring excellent device uniformity and repeatability across production batches, unlike the less mature ReRAM manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The LIM technology reduces power consumption and increases computational efficiency by leveraging silicon diodes' switching characteristics, addressing processing speed and integration limitations while performing both memory and logic functions effectively.
Implementation Method 1
a stateful logic-in-memory using silicon diodes configured to perform a memory function based on a positive feedback loop
Implementation Method 2
The plural memory cells may be turned on based on a latch-up phenomenon in the first channel region and the second channel region when the set voltage is a positive voltage corresponding to a greater voltage than a reference voltage for generating a positive feedback loop
Implementation Method 3
silicon diodes with p-n-p-n structure and electrostatic doping for channel regions
Data Source
AI summary
Disclosed is a stateful logic-in-memory using silicon diodes. More particularly, the stateful logic-in-memory according to an embodiment of the present invention includes a plurality of silicon diodes, each of the silicon diodes includes an anode region, a first channel region, a second channel region and a cathode region and is included as a memory cell.