Silicon Dioxide Deposition Selectivity via Hydroxyl Modification
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Solution Overview
Problem
Existing silicon dioxide deposition methods using ozone and TEOS as precursors face challenges in achieving selective deposition over different substrate materials, with existing techniques often resulting in uniform or non-selective deposition, lacking control over selectivity and thickness variation.
Innovation Solution
The method involves modifying the substrate surface by adding or removing hydroxyl groups using treatments such as exposure to H2O vapor or gases like O2, O3, H2, and hexachlorodisilazane, and adjusting precursor flow rates and pressures to control the selectivity and thickness of silicon dioxide deposition, allowing for selective deposition over different materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thermal chemical vapor deposition using ozone and TEOS is conducted under atmospheric or subatmospheric pressure, then silicon dioxide can be deposited uniformly over the substrate, but selective deposition over different substrate materials cannot be achieved
Solution Approach 1:
The patent applies dynamics by varying process parameters (pressure, temperature, precursor flow rates) during different stages of deposition to achieve both uniform and selective deposition. The process transitions between different deposition modes by dynamically adjusting conditions, allowing the same base process to serve multiple deposition needs.
Solution Approach 2:
The invention utilizes parameter changes by modifying pressure conditions (atmospheric, subatmospheric, or greater than atmospheric), temperature (200-450°C range), and precursor flow rates to control deposition characteristics. These parameter variations enable transition between uniform deposition mode and selective deposition mode.
2Device complexity
If existing deposition methods are used, then deposition process is simple, but control over selectivity and thickness variation is lacking
Solution Approach 1:
The patent applies preliminary action through surface treatment steps performed before deposition to modify substrate surface properties. This preliminary modification of hydroxyl group concentration on substrate surfaces enables subsequent selective deposition without fundamentally changing the deposition process itself.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables controlled selective deposition of silicon dioxide, modifying the selectivity and thickness over different substrate materials, enhancing the precision and effectiveness of the deposition process.
Implementation Method 1
thermal chemical vapor deposition using precursor gases comprising ozone and TEOS
Implementation Method 2
modifying the substrate surface by adding or removing hydroxyl groups using treatments such as exposure to H2O vapor or gases like O2, O3, H2, and hexachlorodisilazane
Data Source
AI summary
Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors includes flowing precursors comprising ozone and TEOS to a substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material having an outer surface onto the substrate. The outer surface is treated effective to one of add hydroxyl to or remove hydroxyl from the outer surface in comparison to any hydroxyl presence on the outer surface prior to said treating. After the treating, precursors comprising ozone and TEOS are flowed to the substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material onto the treated outer surface of the substrate. Other embodiments are contemplated.