Silicon-Doped Fine Metal Wire Films for Transparent Conductivity
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Solution Overview
Problem
Conductive films with fine metal wires face challenges in achieving high transparency and conductivity while maintaining flexibility, as thinning the wires reduces conductivity and increases the risk of breaking due to deformation, and existing adhesion methods are insufficient to prevent peeling from transparent substrates.
Innovation Solution
Incorporating a predetermined amount of silicon atoms into the fine metal wires, with specific atom% ratios, to enhance the strength and adhesion of the metal wire pattern on the transparent substrate, improving both conductivity and flexibility while maintaining transparency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the fine metal wire is thinned to improve transparency, then transparency is improved, but conductivity is reduced
Solution Approach 1:
The patent changes the material composition parameters of the fine metal wire by incorporating silicon atoms at specific concentrations (0.01-10 atom%). This compositional parameter change allows the wire to maintain lower resistance and better conductivity even at reduced thickness, thereby improving transparency without sacrificing electrical performance
Solution Approach 2:
The patent creates a composite material structure by combining conductive metal atoms (M) with silicon atoms (Si) in the fine metal wire. This composite approach leverages the high conductivity of metals like copper, silver, or aluminum while utilizing silicon to enhance structural stability and electrical properties, achieving both transparency and conductivity
2Illumination intensity
If the fine metal wire is thinned to improve transparency, then transparency is improved, but mechanical strength is reduced leading to easy breaking
Solution Approach 1:
The patent modifies the material composition by adding silicon atoms at controlled concentrations (0.01-10 atom%), which fundamentally changes the mechanical properties of the fine metal wire. This compositional adjustment enhances ductility and structural integrity, allowing the thinned wire to resist breaking during handling and device operation while maintaining transparency
3Illumination intensity
If the fine metal wire is thinned to improve transparency, then transparency is improved, but adhesion to substrate is reduced causing peeling
Solution Approach 1:
The patent changes the compositional parameters of the fine metal wire by incorporating silicon atoms (0.01-10 atom%), which alters the surface properties and interfacial characteristics. This compositional modification enhances the wire's adhesion to the transparent substrate, preventing peeling during deformation while maintaining the thinned structure for transparency
4Reliability
If ITO thickness is increased to improve conductivity, then conductivity is improved, but transmittance is reduced
Solution Approach 1:
The patent fundamentally changes the material composition by incorporating silicon atoms (0.01-10 atom%) into the fine metal wire structure. This compositional parameter change enables the wire to achieve high conductivity at much lower thickness levels compared to conventional ITO, thereby maintaining transmittance while improving conductivity
Solution Approach 2:
The patent employs a composite material approach by combining conductive metal atoms with silicon atoms. This composite structure provides superior electrical conductivity per unit thickness compared to pure ITO, allowing the fine metal wire to achieve target conductivity at reduced thickness and thus maintain high transmittance
Data Source
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AI summary
An object of the present invention is to provide a conductive film further improved in at least any of mechanical characteristics, electrical characteristics, and optical characteristics while enjoying improvement in transparency by the thinning of a fine metal wire, and a conductive film roll, an electronic paper, a touch panel, and a flat-panel display comprising the same. The conductive film of the present invention is a conductive film comprising a transparent substrate and a conductive part comprising a fine metal wire pattern disposed on one side or both sides of the transparent substrate, wherein: the fine metal wire pattern is constituted by a fine metal wire; the fine metal wire comprises conductive metal atom M as well as at least any atom selected from silicon atom Si, oxygen atom O, and carbon atom C; and when the maximum thickness of the fine metal wire is defined as T in STEM-EDX analysis on the cross-section of the fine metal wire perpendicular to the direction of drawing of the fine metal wire, the fine metal wire contains at least any of the silicon atom Si, the oxygen atom O, and the carbon atom C at a predetermined ratio in the thickness direction.