Supplementary Doping Tool With Dual Through-Holes for Monocrystalline Silicon
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Solution Overview
Problem
The existing methods for supplementary doping of gallium in monocrystalline silicon are inefficient, costly, and non-uniform, leading to variations in resistivity and low production efficiency due to the difficulty in controlling gallium concentration and the loss of gallium during the doping process, which affects the production rhythm and quality of solar cells.
Innovation Solution
A device comprising a hoisting member, connecting member, and containing member with first and second through-holes is used for supplementary doping, allowing silicon solution to enter through the first hole and carry dopants out through the second hole, with a blocking member to control the flow, utilizing quartz and molybdenum materials to prevent impurities and enable reusability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the conventional supplementary doping method using seed crystal and reduced-power crystal expansion is used, then gallium can be supplemented to improve resistivity hit ratio, but the process takes 3 to 4 hours which seriously delays production rhythm and affects production efficiency
Solution Approach 1:
The patent extracts the supplementary doping function from the complex seed crystal expansion process. By using a separate doping device with containing member that can be lowered into the molten silicon, the doping function is isolated and simplified, enabling rapid gallium supplementation without the time-consuming crystal expansion steps, thus improving both resistivity control and production efficiency
Solution Approach 2:
The containing member is pre-filled with gallium particles before being lowered into the molten silicon. This preliminary preparation eliminates the need for complex real-time doping adjustments during crystal growth, allowing rapid supplementation and improving production rhythm while maintaining resistivity hit ratio
2Manufacturing precision
If gallium particles are placed on the crystal and melted in the silicon solution through purification and high temperature, then supplementary doping can be achieved, but gallium is easily melted and lost in the process, so that full doping cannot be guaranteed
Solution Approach 1:
The containing member acts as an intermediary device that holds gallium particles in a controlled environment. By lowering this containing member directly into the molten silicon, the patent creates a controlled interface for doping that prevents gallium loss through uncontrolled melting and evaporation, ensuring complete and uniform doping
Solution Approach 2:
The patent changes the temperature parameter control by using a dedicated doping device that can be independently heated. This allows precise temperature control during the doping process, preventing gallium loss while ensuring complete dissolution and uniform distribution in the molten silicon
3Manufacturing precision
If devices for supplementary doping gallium element are used, then doping can be performed, but the devices cannot be reused and have complex structures, leading to high cost and non-uniform doping
Solution Approach 1:
The doping device with containing member is designed as a universal tool that can be reused for multiple doping operations. The simple structure with first and second through-holes allows it to be lowered into the molten silicon, filled with gallium, and raised for uniform doping, then reused in subsequent operations, reducing cost and improving consistency
Solution Approach 2:
The device is segmented into simple functional components: a containing member with first through-hole for filling, second through-hole for doping, and connecting member for hoisting. This segmentation creates a simple, reusable structure that avoids the complexity of conventional devices while ensuring uniform doping through controlled gallium release
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces man-hours, improves production efficiency, and enhances the utilization rate of effective man-hours while maintaining consistent resistivity, reducing production costs, and ensuring uniform doping without introducing new impurities.
Implementation Method 1
a distance between the first through-hole and the joint is less than a distance between the second through-hole and the joint in the vertical direction, so that the silicon solution enters the containing member from the first through-hole and carries dopants out of the containing member through the second through-hole during the supplementary doping process
Implementation Method 2
with a blocking member to control the flow
Implementation Method 3
utilizing quartz and molybdenum materials to prevent impurities
Data Source
AI summary
A method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes are provided. The device includes a hoisting member, a connecting member, and a containing member which are arranged in sequence from top to bottom in a vertical direction, wherein the hoisting member is connected with one end of the connecting member, and another end of the connecting member is movably connected with the containing member, so that the containing member is rotatable with respect to the connecting member. The containing member is provided with a first through-hole and a second through-hole, and the connecting member and the containing member are connected at a joint. A distance between the first through-hole and the joint is less than a distance between the second through-hole and the joint in the vertical direction.