Silicon EUV Resist Underlayer Composition for Fine Patterning
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Solution Overview
Problem
Current resist underlayer films for EUV lithography lack improved exposing sensitivity, intermix with EUV resists, and have insufficient dry etching rates, hindering the formation of fine patterns in semiconductor manufacturing.
Innovation Solution
A resist underlayer film-forming composition comprising hydrolyzable organosilanes, their hydrolyzed products, or hydrolyzed condensates, combined with sulfonic acid ions and onium ions, which form a dense cured film suitable as a hardmask, enhancing adhesion and etching rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional hardmask materials are used, then adhesion to substrate is achieved, but exposing sensitivity of EUV resist deteriorates
Solution Approach 1:
The patent introduces an underlayer film as an intermediary between the substrate and the EUV resist. This underlayer film is formed from a composition containing hydrolyzable organosilane and onium sulfonate, which acts as a mediator that improves resist adhesion to the substrate while simultaneously enhancing the exposing sensitivity of the EUV resist, thereby resolving the contradiction between adhesion and exposing sensitivity
Solution Approach 2:
The patent changes the chemical composition parameters of the underlayer film by using hydrolyzable organosilane with specific molecular structures and onium sulfonate compounds. By controlling the molecular weight, hydrolysis degree, and composition ratios, the film forms a dense structure that optimizes both adhesion properties and exposing sensitivity, resolving the trade-off between these two parameters
2Quantity of substance
If conventional underlayer compositions are used, then film formation is achieved, but dry etching rate is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters by incorporating hydrolyzable organosilane and onium sulfonate, which form a dense cured film with high silicon content. This composition achieves a high dry etching rate (1.5-3 times faster than conventional resists) while maintaining sufficient film thickness, resolving the contradiction between film quantity and etching productivity
Solution Approach 2:
The patent creates a composite underlayer film combining hydrolyzed organosilane network structure with onium sulfonate compounds. This composite material provides both sufficient film thickness for pattern formation and high dry etching rate, as the silicon-containing network structure etches faster than conventional organic resist materials
3Ease of manufacture
If conventional underlayer films are used, then processing is achieved, but intermixing with EUV resist occurs
Solution Approach 1:
The underlayer film acts as an intermediary barrier between the substrate and the EUV resist. The dense cured film structure formed from hydrolyzable organosilane and onium sulfonate prevents intermixing between the resist components and the substrate, while still allowing proper processing and pattern transfer, thus resolving the contradiction between ease of manufacture and composition stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition improves exposing sensitivity, prevents intermixing with EUV resists, and increases dry etching rates, enabling the formation of fine patterns and stable hardmask layers for semiconductor devices.
Implementation Method 1
comprising: a hydrolyzable organosilane, a hydrolyzed product of the hydrolyzable organosilane, or a hydrolyzed condensate of the hydrolyzable organosilane
Implementation Method 2
a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion
Data Source
AI summary
A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1):R1aSi(R2)4-a Formula (1)and compounds of Formula (2):R3cSi(R4)3-c2Yb Formula (2)a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.