Silicon Film Surface Conditioning for Nickel Diffusion Control
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Solution Overview
Problem
Existing methods for transforming amorphous silicon films into polycrystalline silicon films lack control over nickel concentration, which affects the quality and consistency of the resulting films.
Innovation Solution
A film forming method that includes preparing a substrate with an amorphous silicon film, altering its surface state, and diffusing nickel into the film using a nickel raw material gas, allowing control over the nickel concentration through adjustments in the surface state and diffusion conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If nickel particles are adsorbed on the amorphous silicon film surface and annealing is performed, then the amorphous silicon film is transformed into a polycrystalline silicon film, but the nickel concentration in the silicon film cannot be controlled
Solution Approach 1:
The patent applies parameter changes by modifying the surface state of the amorphous silicon film (e.g., surface treatment conditions, surface energy, surface morphology) to control the diffusion behavior of nickel. By changing surface parameters before nickel supply, the nickel concentration in the resulting polycrystalline silicon film can be precisely controlled, directly resolving the technical contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The patent implements preliminary action by performing surface state modification on the amorphous silicon film before supplying nickel. This preparatory step establishes controlled surface conditions that dictate subsequent nickel diffusion characteristics, enabling predictable nickel concentration control without requiring complex real-time adjustment mechanisms during the nickel supply process.
2Manufacturing precision
If the surface state of the amorphous silicon film is changed before nickel diffusion, then nickel concentration can be controlled, but additional process steps are required
Solution Approach 1:
The patent utilizes parameter changes in the surface state (such as surface treatment parameters, surface energy levels, or surface chemical composition) to control nickel diffusion characteristics. By adjusting these surface parameters, uniform nickel concentration distribution is achieved in the polycrystalline silicon film, while the process remains integrated and does not require separate complex equipment.
Solution Approach 2:
The surface state modification step serves multiple functions: it prepares the surface for nickel adsorption, controls nickel diffusion behavior, and influences polycrystalline formation. This multi-functionality reduces the need for additional dedicated process steps or equipment, thereby limiting the increase in device complexity while achieving improved nickel concentration uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of nickel concentration in the silicon film, resulting in consistent and high-quality polycrystalline silicon films suitable for applications like three-dimensional NAND flash memories.
Implementation Method 1
diffusing nickel into the amorphous silicon film by supplying a nickel raw material gas to the amorphous silicon film
Data Source
AI summary
To provide a technique capable of controlling a nickel concentration in a silicon film, a film forming method includes: preparing a substrate having an amorphous silicon film on a surface of the substrate; changing a surface state of the amorphous silicon film; and after the changing, diffusing nickel into the amorphous silicon film by supplying a nickel raw material gas to the amorphous silicon film.