Silicon Germanium Cleaning Solution Prevents Oxidation Damage
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Solution Overview
Problem
Current cleaning solutions for semiconductor devices with silicon germanium layers cause damage and oxidation, leading to deformation of the surface and ineffective removal of impurities, particularly when using hydrogen fluoride, hydrogen peroxide, or nitric acid.
Innovation Solution
A cleaning solution comprising 0.01 to 2.5% non-ionic surfactant, 0.05 to 5.0% alkaline compound, and the remaining percentage as pure water, which effectively removes impurities and improves surface roughness without damaging the silicon germanium layer, and optionally includes a metal corrosion inhibitor to prevent corrosion of metal patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If standard cleaning solution (SC-1) containing hydrogen peroxide or hydrogen fluoride is used, then cleaning power is improved, but the silicon germanium layer is rapidly oxidized and etched faster than silicon layer
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning solution by replacing hydrogen peroxide and hydrogen fluoride with alternative reagents having different chemical properties. The new solution maintains cleaning effectiveness while eliminating the oxidation damage caused by H2O2 and HF on silicon germanium layers.
Solution Approach 2:
The patent introduces a new cleaning solution formulation as an intermediary substance that performs the cleaning function without causing harmful oxidation. This intermediary solution acts as a mediator between the cleaning requirement and the protection of silicon germanium layers.
2Productivity
If cleaning solution with high etching selectivity is used to remove impurities, then cleaning effectiveness is improved, but the surface portion of silicon germanium layer is damaged and deformed
Solution Approach 1:
The patent modifies the chemical parameters of the cleaning solution to achieve a balanced formulation that provides sufficient cleaning power while controlling etching rate. The adjusted composition removes impurities effectively without damaging or deforming the silicon germanium surface.
Solution Approach 2:
The patent converts the potential harmful effect of etching into a beneficial selective removal of impurities. By carefully controlling the solution composition, the etching action is directed specifically at contaminant removal while preserving the integrity of the silicon germanium surface.
3Productivity
If conventional cleaning processes are used, then impurity removal is attempted, but over-etching occurs and metal patterns are corroded
Solution Approach 1:
The patent changes multiple parameters of the cleaning solution including pH, oxidation potential, and chemical composition to create a formulation that selectively removes impurities without affecting metal patterns. The adjusted parameters ensure pattern integrity while maintaining cleaning effectiveness.
Solution Approach 2:
The new cleaning solution serves as an intermediary that mediates between the need for impurity removal and the protection of metal patterns. It provides a chemical environment that cleans effectively while being gentle on metal structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes impurities and improves the surface state of silicon germanium layers without causing damage, reducing corrosion and over-etching, thereby enhancing the reliability and efficiency of semiconductor device manufacturing.
Implementation Method 1
a cleaning solution comprising 0.01 to 2.5% non-ionic surfactant, 0.05 to 5.0% alkaline compound, and the remaining percentage as pure water, which effectively removes impurities and improves surface roughness
Implementation Method 2
optionally includes a metal corrosion inhibitor to prevent corrosion of metal patterns
Data Source
AI summary
Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.