Silicon Ground Mounting Structure for Plasma Etching Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In plasma processing apparatuses, existing technologies face challenges in suppressing the etching of wall and ground members due to chemical species deposition and heat exchange, leading to potential damage and non-uniformity issues.

Innovation Solution

A plasma processing apparatus design featuring a wall member exposed to the outside chamber, a ground member made of silicon with a non-contact configuration using insulating members with spherical surfaces, and thermal management to prevent chemical deposition and heat exchange, thereby minimizing etching and damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the wall member is exposed to the outside chamber space, then cooling of the wall member is improved, but chemical species deposition on the wall member surface increases causing etching

Engineering Contradiction:
Improvewall member temperatureVSAvoidchemical species deposition
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

An insulating member is introduced as an intermediary between the ground member and the wall member. This insulating member prevents direct contact and heat exchange between the ground member and wall member, while allowing the wall member to be cooled by exposure to the outside chamber space. The insulating member mediates the thermal interaction to prevent etching of the ground member.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If the ground member is made of silicon and mounted on insulating members, then etching suppression is improved, but heat exchange between wall member and ground member increases

Engineering Contradiction:
Improveetching of ground memberVSAvoidheat exchange between wall member and ground member
Core Design Contradiction:
Object-affected harmful factorsVSTemperature

Solution Approach 1:

The insulating member serves as a thermal barrier between the wall member and ground member. By placing this intermediary component between them, the patent prevents direct thermal contact while maintaining the electrical grounding function. The insulating member blocks heat transfer from the wall member to the ground member, preventing temperature-induced etching of the silicon ground member.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Temperature

If the ground member is in non-contact state with insulating members, then heat exchange is prevented, but mounting stability may be compromised

Engineering Contradiction:
Improveheat exchange preventionVSAvoidmounting stability
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The insulating member is designed to provide both thermal isolation and mechanical support. It acts as an intermediary that prevents heat exchange between the wall member and ground member while simultaneously providing a stable mounting surface. The insulating member's spherical surface configuration ensures stable contact with the ground member, maintaining mounting stability without direct thermal contact.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively suppresses etching and damage to the wall and ground members by allowing cooling of the wall member and preventing heat exchange, maintaining the integrity and uniformity of the plasma processing environment.

Implementation Method 1

The one or more insulating members are provided on the wall member... The ground member is supported in a non-contact state with the one or more insulating members therebetween

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 2

The plasma processing apparatus is configured to form plasma by dissociating a gas within the chamber

Methodology Applied
Scientific EffectPlasma dissociation: Plasma

Data Source

PatentUS11984300B2Plasma processing apparatus
Publication Date: 2024.05.14 TOKYO ELECTRON LTD
  • US11984300B2 patent drawing
  • US11984300B2 patent drawing
  • US11984300B2 patent drawing

AI summary

A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.