Silicon Hardmask Oxidation by Ion Implantation for Low-Roughness Patterning
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Solution Overview
Problem
Conventional silicon hardmask patterning processes result in line edge roughness (LER) and line width roughness (LWR) due to carbon/(nitride/oxide) hardmask depositions and etchings, necessitating improved methods and equipment.
Innovation Solution
Directly form an oxide hardmask on a silicon mask using ion implantation-enhanced or ion implantation-induced oxidation, bypassing conventional deposition and etching steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional carbon/(nitride/oxide) hardmask deposition and etching processes are used, then a complete hardmask structure can be formed, but line edge roughness (LER) and line width roughness (LWR) increase
Solution Approach 1:
The patent combines multiple separate deposition and etching steps into a single ion implantation process. Instead of sequentially depositing carbon, nitride, and oxide layers followed by multiple etching steps, the invention uses ion implantation to directly form the oxide hardmask pattern in one step, merging several process steps into one unified operation that reduces roughness.
Solution Approach 2:
The patent replaces conventional thermal or plasma-based deposition and etching mechanisms with ion implantation. Ion implantation uses accelerated ions to directly modify the silicon mask material, substituting the multi-step thermal/chemical processes with a single particle-beam-based process that provides better control and reduced roughness.
2Manufacturing precision
If multiple hardmask deposition and etching steps are performed, then the desired pattern can be achieved, but process time increases
Solution Approach 1:
The patent skips the intermediate deposition and etching steps by directly using ion implantation to form the oxide hardmask. This rushes through the conventional multi-step process by jumping directly to the final patterning step, significantly reducing total process time while maintaining or improving patterning precision.
Solution Approach 2:
The ion implantation process performs the oxidation action preliminarily during the implantation step itself. Rather than depositing material and then etching, the oxygen ions are implanted directly into the silicon mask to form the oxide pattern in advance, eliminating subsequent processing steps and reducing overall time.
3Quantity of substance
If conventional hardmask processes are used, then material coverage can be achieved, but material waste increases
Solution Approach 1:
The ion implantation process is self-service in that the oxygen ions themselves serve as both the implantation species and the oxidation source. The implanted oxygen directly oxidizes the silicon mask material in situ, eliminating the need for separate oxidation steps and reducing material waste by using the implantation process itself to create the desired oxide structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces LER and LWR by forming an oxide layer within the silicon hardmask opening through controlled ion implantation, improving patterning precision.
Implementation Method 1
forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon mask
Implementation Method 2
forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon mask
Data Source
AI summary
Methods of forming a silicon hardmask are disclosed. In one example, a method may include forming a silicon mask over a device layer, forming a carbon mask over the silicon mask, and forming an opening through the carbon mask. The method may further include forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon mask.