Semiconductor Layer Stack With Silicon Interlayer for Delamination Control
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Solution Overview
Problem
Conventional semiconductor devices with magnetic inductors face challenges such as delamination and poor adhesion between organic and inorganic layers due to high topography and film stress, leading to reliability issues.
Innovation Solution
Incorporating a silicon layer between the organic and inorganic layers to form covalent bonds instead of hydrogen bonds, enhancing adhesion and reducing delamination, and using a silicon layer between the organic layer and the conductive layer to improve adhesion and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetic inductors are fabricated using conventional semiconductor processes, then the device can be manufactured, but delamination and poor adhesion occur between organic and inorganic layers due to high topography and film stress
Solution Approach 1:
A silicon layer is introduced as an intermediary between the organic layer and the inorganic layer. This intermediate silicon layer forms covalent bonds with both the organic layer and the inorganic layer, acting as a mediator that improves adhesion and prevents delamination caused by high topography and film stress in the magnetic inductor structure.
2Reliability
If a silicon layer is added between organic and inorganic layers, then adhesion is improved and delamination is reduced, but the device structure becomes more complex
Solution Approach 1:
The silicon layer changes the bonding parameter between organic and inorganic layers from hydrogen bonds to covalent bonds. This parameter change in bond strength and type significantly improves adhesion and structural integrity, justifying the additional layer in the device structure.
3Ease of manufacture
If conventional layer stacking is used, then manufacturing is simpler, but film stress causes delamination and reliability issues
Solution Approach 1:
The silicon layer serves as a stress-absorbing intermediary between organic and inorganic layers. It mitigates the harmful effects of film stress that would otherwise cause delamination, while still allowing the manufacturing process to remain relatively simple by using standard layer deposition techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon layer improves the adhesion between organic and inorganic layers, reducing delamination and increasing the reliability of semiconductor devices by forming covalent bonds and enhancing the structural integrity of the magnetic inductor structure.
Implementation Method 1
Incorporating a silicon layer between the organic and inorganic layers to form covalent bonds instead of hydrogen bonds, enhancing adhesion and reducing delamination
Data Source
AI summary
A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.