Silicon Interposer Resistivity Tuning for Lower High-Frequency Loss
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Solution Overview
Problem
Conventional silicon interposers fail to meet the requirements for high frequency and wide band communication due to transmission loss issues, which are exacerbated by the difficulty in increasing the resistivity of silicon substrates beyond 1000 Ω·cm.
Innovation Solution
A method involving the use of a silicon single crystal substrate with a dopant, where a particle beam is irradiated around the formation part of the through electrode to deactivate the dopant, introducing point defects that act as carrier traps and increase resistivity, thereby reducing transmission loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a silicon substrate is used for interposer to enable miniaturization, then device size is reduced, but transmission loss increases at high frequencies
Solution Approach 1:
The patent applies local quality by creating regions of high resistivity around through-electrode formation parts through particle beam irradiation, while maintaining lower resistivity in other regions. This localized modification of electrical properties allows the substrate to support high-frequency signals with reduced transmission loss while preserving the overall miniaturized structure.
Solution Approach 2:
The patent changes the electrical parameter (resistivity) of the silicon substrate by irradiating it with particle beams, specifically creating high-resistivity regions around through-electrode formation areas. This parameter change from conventional resistivity to high resistivity (>1000 Ω·cm) in specific regions reduces signal loss at high frequencies while maintaining the compact form factor.
2Loss of energy
If dopant concentration is reduced to increase resistivity above 1000 Ω·cm, then transmission loss decreases, but manufacturing difficulty increases significantly
Solution Approach 1:
The patent applies preliminary action by first forming the silicon substrate with conventional dopant distribution, then subsequently irradiating it with particle beams to create high-resistivity regions. This two-step approach avoids the manufacturing complexity of directly producing ultra-low dopant concentration substrates, as the high resistivity is achieved through post-processing irradiation rather than precise control during substrate fabrication.
Solution Approach 2:
The patent replaces the mechanical/chemical process of controlling dopant concentration during substrate fabrication with a physical process of particle beam irradiation. Instead of precisely controlling dopant diffusion and concentration during manufacturing, the high resistivity is achieved through irradiation-induced defects that trap carriers, substituting a manufacturing process with a treatment process that is easier to control and implement.
3Ease of manufacture
If conventional insulation films are used in silicon interposers, then manufacturing is simplified, but high frequency transmission requirements are not met
Solution Approach 1:
The patent changes the electrical parameter of the silicon substrate itself by creating high-resistivity regions through particle beam irradiation, rather than relying on insulation films to manage electrical properties. This fundamental change in the substrate's electrical characteristics enables high-frequency transmission while maintaining manufacturing simplicity, as the substrate modification is achieved through irradiation rather than complex film deposition and patterning processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the resistivity around the through electrode region, suppressing transmission loss and improving high frequency characteristics in semiconductor apparatus.
Implementation Method 1
a step of irradiating a particle beam to at least around a formation part for the through electrode on the silicon single crystal substrate to deactivate the dopant in a region around the formation part for the through electrode
Implementation Method 2
by irradiating a particle beam to at least around the formation part for the through electrode on the silicon single crystal substrate containing a dopant, a point defect may be introduced around the formation part for the through electrode on the silicon single crystal substrate, so that a carrier may be trapped
Data Source
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AI summary
The present invention is a method for producing a semiconductor apparatus using an interposer substrate in which semiconductor devices formed on a silicon single crystal substrate are connected to each other by a through electrode, the method including: a step of providing the silicon single crystal substrate containing a dopant; a step of forming the semiconductor devices and the through electrode on the silicon single crystal substrate to obtain the interposer substrate; and a step of irradiating a particle beam to at least around a formation part for the through electrode on the silicon single crystal substrate to deactivate the dopant in a region around the formation part for the through electrode. Thus, a method for producing a semiconductor apparatus capable of producing a semiconductor apparatus with improved transmission loss characteristic is provided.