Silicon Interposer TSV Overlay Tolerance via Expanded Pads

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Solution Overview

Problem

The pick and place operation in fan-out wafer level packaging introduces lateral variations during die placement, leading to potential electrical disconnects or shorts between through-substrate via structures and redistribution layers, resulting in yield losses.

Innovation Solution

A fan-out silicon interposer structure with package-side metal pads that provide enhanced overlay tolerance, featuring through-silicon via structures, an epoxy molding compound interposer frame, and package-side redistribution structures to minimize alignment errors and ensure reliable connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If pick and place operation is used to position die or interposer, then manufacturing efficiency is improved, but lateral placement variations occur leading to electrical connection defects

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidplacement precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent introduces an intermediary alignment structure consisting of alignment marks formed on the interposer and corresponding target marks on the carrier substrate. This intermediary marking system mediates between the pick-and-place operation and the final electrical connection, providing a reference framework that compensates for placement variations and enables precise alignment of through-silicon via structures with redistribution layers.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Area of moving object

If pitch of through-substrate via structures is reduced to increase density, then area utilization is improved, but overlay tolerance decreases leading to increased defect rate

Engineering Contradiction:
Improvearea utilizationVSAvoidelectrical connection reliability
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent implements preliminary formation of alignment marks and target marks before the pick-and-place operation. These pre-formed marks establish a reference framework in advance, allowing the system to compensate for subsequent placement variations. The alignment marks are formed on the interposer at defined locations, and target marks are formed on the carrier substrate, creating a pre-established alignment system that ensures reliable electrical connections even when via pitch is reduced for higher density.

Inventive Principle:
Principle #10Preliminary action

3Extent of automation

If mechanical pick and place operation is used, then automation is improved, but overlay accuracy deteriorates due to mechanical variations

Engineering Contradiction:
Improveautomation levelVSAvoidoverlay accuracy
Core Design Contradiction:
Extent of automationVSManufacturing precision

Solution Approach 1:

The patent replaces reliance on mechanical placement precision with an optical/mark-based alignment system. Instead of depending solely on the mechanical accuracy of the pick-and-place apparatus, the invention uses formed alignment marks and target marks that provide a reference system for optical or metrology-based alignment. This substitution of mechanical precision requirements with mark-based alignment allows automated placement while maintaining high overlay accuracy through the mark-guided positioning system.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS20230020959A1Silicon interposer including through-silicon via structures with enhanced overlay tolerance and methods of forming the same
Publication Date: 2023.01.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20230020959A1 patent drawing
  • US20230020959A1 patent drawing
  • US20230020959A1 patent drawing

AI summary

An array of through-silicon via (TSV) structures is formed through a silicon substrate, and package-side metal pads are formed on backside surfaces of the array of TSV structures. The silicon substrate is disposed over a carrier substrate, and an epoxy molding compound (EMC) interposer frame is formed around the silicon substrate. A die-side redistribution structure is formed over the silicon substrate and the EMC interposer frame, and at least one semiconductor die is attached to the die-side redistribution structure. The carrier substrate is removed from underneath the package-side metal pads. A package-side redistribution structure is formed on the package-side metal pads and on the EMC interposer frame. Overlay tolerance between the package-side redistribution wiring interconnects and the package-side metal pads increases due to increased areas of the package-side metal pads.