Semiconductor Silicon Layer Thickness Uniformity via Magnetic Field Compensation
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Solution Overview
Problem
In semiconductor device manufacturing, deviations in the thickness of silicon-containing layers across the substrate can lead to significant variations in device characteristics, particularly due to uneven polishing and slurry distribution during the chemical mechanical polishing (CMP) process, affecting the yield and performance of miniaturized semiconductor devices.
Innovation Solution
A method involving data-driven process compensation, where the thickness distribution of polished silicon-containing layers is measured, and process data is calculated to adjust the film thickness by activating a process gas with a magnetic field of specific strength, ensuring uniformity across the substrate, particularly between the center and peripheral portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chemical mechanical polishing (CMP) process is used to form silicon-containing layers, then manufacturing efficiency is improved, but thickness uniformity across the substrate deteriorates due to uneven slurry distribution
Solution Approach 1:
The patent applies local quality by adjusting the magnetic field strength distribution across different regions of the substrate. Specifically, the magnetic field strength is set to be stronger at the peripheral portion and weaker at the center portion, creating localized differences in process conditions that compensate for the uneven slurry distribution inherent in CMP processes. This allows the peripheral region to receive enhanced activation of process gas to compensate for reduced slurry coverage.
Solution Approach 2:
The patent changes physical parameters by introducing a spatially varying magnetic field strength as a new control parameter. The magnetic field strength is adjusted according to position on the substrate, with specific strength values assigned to different radial positions. This parameter change enables selective activation of process gas to compensate for thickness variations caused by CMP slurry distribution patterns.
2Manufacturing precision
If magnetic field strength is increased to activate process gas for thickness compensation, then manufacturing precision is improved, but energy consumption increases
Solution Approach 1:
The patent applies local quality by spatially varying the magnetic field strength across the substrate rather than using uniform high strength. The magnetic field is concentrated where needed (peripheral regions with thinner film) and reduced where not needed (center region with adequate thickness), thereby achieving thickness uniformity while minimizing overall energy consumption compared to a uniform high-strength magnetic field approach.
Solution Approach 2:
The patent applies partial action by providing magnetic field activation only where and when needed for thickness compensation. Rather than applying excessive magnetic field strength uniformly across the entire substrate, the magnetic field is applied selectively to regions requiring compensation, optimizing the balance between achieving sufficient thickness uniformity and minimizing energy consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively compensates for thickness differences, reducing deviations and enhancing the uniformity of the silicon-containing layers, thereby improving the yield and performance of semiconductor devices by ensuring consistent film thickness across the substrate.
Implementation Method 1
compensating for the difference based on the process data by activating the process gas with a magnetic field having a predetermined strength on the substrate
Data Source
AI summary
The present disclosure provides a technique capable of suppressing a deviation in a characteristic of a semiconductor device. There is provided a technique includes: (a) receiving data representing a thickness distribution of a polished silicon-containing layer on a substrate comprising a convex structure whereon the polished silicon-containing layer is formed; (b) calculating, based on the data, a process data for reducing a difference between a thickness of a portion of the polished silicon-containing layer formed at a center portion of the substrate and that of the polished silicon-containing layer formed at a peripheral portion of the substrate; (c) loading the substrate into a process chamber; (d) supplying a process gas to the substrate; and (e) compensating for the difference based on the process data by activating the process gas with a magnetic field having a predetermined strength on the substrate.