Silicon Layer Composition for Selective Etching and Anti-Reflection
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Solution Overview
Problem
In semiconductor manufacturing, existing silicon-containing layer compositions for multilayer resist processes fail to achieve high etching selectivity between fluorine-based and oxygen-based gases, and often suffer from pattern collapse due to inadequate anti-reflective properties during lithography.
Innovation Solution
A silicon-containing layer forming composition incorporating a polysiloxane compound with a hexafluoroisopropanol (HFIP) group-introduced aromatic ring, which forms a film with a high etching rate against fluorine-based gases and low etching rate against oxygen-based gases, enhancing etching selectivity and anti-reflective functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional silicon-containing layer composition is used, then the layer can be formed as an intermediate layer, but the etching selectivity between fluorine-based gas and oxygen-based gas is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the silicon-containing layer by incorporating specific compounds (silicon oxide, silicon nitride, silicon oxynitride) in controlled ratios. This compositional parameter adjustment creates distinct etching rate differences between fluorine-based gas (higher etching rate) and oxygen-based gas (lower etching rate), thereby achieving the required etching selectivity for the intermediate layer
Solution Approach 2:
The patent employs a composite material approach by creating a silicon-containing layer that combines multiple silicon-based compounds (silicon oxide, silicon nitride, silicon oxynitride) in specific proportions. This composite structure provides tailored etching properties that enable high selectivity between different gas types, allowing the intermediate layer to be differentiated during sequential etching processes
2Manufacturing precision
If the resist pattern has a small pattern width and high aspect ratio, then fine patterning is achieved, but the pattern collapses during development or drying
Solution Approach 1:
The silicon-containing intermediate layer acts as a mediator between the resist pattern and the substrate. It provides mechanical support to high aspect ratio patterns during development and drying processes, preventing collapse while allowing the fine pattern dimensions to be maintained. The intermediate layer serves as a structural buffer that stabilizes the resist pattern
3Manufacturing precision
If the etching time is extended to transfer the pattern, then the pattern transfers to the substrate, but the resist pattern collapses
Solution Approach 1:
The patent performs preliminary etching of the silicon-containing intermediate layer before etching the substrate. This preliminary action creates a stepped structure where the intermediate layer is etched first, providing a support framework that prevents resist pattern collapse during subsequent longer etching operations needed for complete pattern transfer to the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high etching selectivity and prevents pattern collapse by forming a silicon-containing layer with improved etching properties and anti-reflective functionality, enabling the formation of fine patterns in semiconductor manufacturing.
Implementation Method 1
which forms a film with a high etching rate against fluorine-based gases and low etching rate against oxygen-based gases
Implementation Method 2
high etching rate against fluorine-based gases and low etching rate against oxygen-based gases
Implementation Method 3
enhancing etching selectivity and anti-reflective functionality
Implementation Method 4
anti-reflective functionality
Data Source
AI summary
Provided is a silicon-containing layer forming composition for forming a silicon-containing layer which exhibits an anti-reflective function during exposure in a multilayer resist process and, during dry etching, shows a high etching rate against a plasma of fluorine-based gas and a low etching rate against a plasma of oxygen-based gas. The silicon-containing layer forming composition includes a polysiloxane compound having a structural unit of the formula: [(R1)bR2mSiOn/2] and a solvent. In the formula, R1 is a group represented by the following formula:(where a is an integer of 1 to 5; and a wavy line means that a line which the wavy line intersects is a bond); R2 is each independently a hydrogen atom, a C1-C3 alkyl group, a phenyl group, a hydroxy group, a C1-C3 alkoxy group or a C1-C3 fluoroalkyl group; b is an integer of 1 to 3; m is an integer of 0 to 2; n is an integer of 1 to 3; and a relationship of b+m+n=4 is satisfied.