Silicon Layered Mounting Table for Semiconductor Wafer Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing mounting tables for semiconductor wafers face challenges with high cost due to ceramic materials and require thick electrical insulation for thermal expansion mismatch, limiting high-speed heating and heat resistance.
Innovation Solution
A mounting table composed of stacked layers, including a ceiling layer, heating layer, and cooling layer, formed from silicon single crystal substrates with oxide films for bonding, allowing for high-speed heating and low-cost manufacturing by minimizing thermal expansion differences and enhancing power density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If ceramic materials are used for the mounting table, then heat resistance is improved, but manufacturing cost increases
Solution Approach 1:
The patent changes the material parameter from ceramic to silicon, which has comparable heat resistance properties but significantly lower manufacturing cost. The silicon substrate maintains the required thermal performance while enabling more economical production processes.
Solution Approach 2:
The patent employs silicon substrates that can be manufactured at lower cost compared to ceramic materials. The mounting table structure uses silicon layers that are more economically producible while still achieving the required functional lifespan for semiconductor manufacturing applications.
2Reliability
If thick electrical insulation is added for thermal expansion mismatch, then reliability is improved, but thermal capacity increases limiting high-speed heating
Solution Approach 1:
The patent uses silicon for both the substrate and mounting table layers, creating a homogeneous material system with matched thermal expansion coefficients. This eliminates the thermal expansion mismatch problem that would otherwise require thick insulation layers, thereby maintaining electrical insulation reliability without increasing thermal capacity.
Solution Approach 2:
The patent creates a composite structure using multiple silicon layers with different functionalities (substrate, heating layer, cooling layer, insulation layer) but identical material composition. This homogeneous composite approach provides electrical insulation through the silicon-nitride interface rather than through thick insulating material, preserving fast heating capability.
3Temperature
If ceramic materials are used, then heat resistance is improved, but device complexity increases
Solution Approach 1:
The patent changes the material parameter from ceramic to silicon, simplifying the overall device structure. Silicon's compatibility with standard semiconductor manufacturing processes allows for integrated fabrication of the mounting table layers without requiring complex assembly of different material types.
Solution Approach 2:
The patent merges multiple functions into a silicon-based layered structure where the substrate, heating elements, cooling channels, and insulation are all integrated into a unified silicon construction. This eliminates the need for separate ceramic components and their associated complex assembly procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-speed heating and cooling of wafers with reduced thermal capacity and cost, while maintaining high insulation resistance and preventing electromagnetic interference, thus improving the efficiency and cost-effectiveness of semiconductor inspections.
Implementation Method 1
each of the plurality of layers is bonded to a different layer which is adjacent in a stacking direction through oxide films formed on the silicon single crystal substrate or the silicon polycrystalline substrate
Implementation Method 2
a heating layer formed at a rear surface side of the ceiling layer and configured to heat the ceiling layer
Implementation Method 3
minimizing thermal expansion differences
Data Source
AI summary
There is provided a mounting table on which a workpiece is mounted, including: a plurality of layers including a ceiling layer having a front surface on which the workpiece is mounted, and a heating layer formed at a rear surface side of the ceiling layer and configured to heat the ceiling layer, the plurality of layers being stacked above one another. Each of the plurality of layers is formed by a silicon single crystal substrate or a silicon polycrystalline substrate. Each of the plurality of layers is bonded to a different layer which is adjacent in a stacking direction through oxide films formed on the silicon single crystal substrate or the silicon polycrystalline substrate.