Silicon Light Absorption Layer Shields Oxide Semiconductor TFT
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Solution Overview
Problem
Oxide semiconductor thin film transistors are susceptible to shifts in threshold voltage due to light irradiation, affecting their electric properties and reliability.
Innovation Solution
Incorporating a silicon-containing light absorption layer with a band gap smaller than 2.5 eV above the oxide semiconductor layer to absorb light and prevent photo-current generation, which includes materials like doped silicon, amorphous silicon, and other silicon variants, and configuring it to be in contact with the source and drain to provide electric shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an oxide semiconductor layer is used as the channel layer, then carrier mobility is improved and threshold voltage uniformity is improved, but the threshold voltage shifts due to light irradiation
Solution Approach 1:
A silicon-containing light absorption layer is introduced as an intermediary between the light source and the oxide semiconductor channel layer. This layer absorbs incident light before it reaches the channel layer, preventing photo-current generation and threshold voltage shifts while maintaining the electrical performance benefits of the oxide semiconductor material
Solution Approach 2:
The silicon-containing layer, which has a band gap smaller than 2.5 eV, is specifically designed to absorb light in the visible spectrum. By converting the harmful light irradiation into absorbed energy in the silicon layer, the oxide semiconductor channel layer is protected from light-induced threshold voltage shifts, thus transforming a harmful effect into a protective mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively shields the oxide semiconductor layer from light irradiation, preventing current leakage and improving the reliability and electric properties of the thin film transistor structure.
Implementation Method 1
a silicon-containing light absorption layer... to absorb light and prevent photo-current generation
Implementation Method 2
configuring it to be in contact with the source and drain to provide electric shielding
Data Source
AI summary
A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.