Silicon Light Emitting Device Lateral Isolation Removal
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Solution Overview
Problem
Existing light emitting devices fabricated using semiconductor materials like silicon face challenges due to isolation techniques that inhibit punch-through and reach-through modes, leading to reduced electroluminescence efficiency and light transmission issues.
Innovation Solution
A light emitting device is designed with a substrate having laterally extending links between doped islands, eliminating isolation barriers to facilitate punch-through and reach-through modes, and a terminal arrangement to apply reverse bias, enhancing light transmission and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If isolation barriers are formed using lateral device isolation techniques (LOCOS or STI) to laterally isolate doped implanted regions, then device isolation and manufacturing precision are improved, but light transmission is inhibited and electroluminescence efficiency is reduced
Solution Approach 1:
The patent removes the isolation barrier between adjacent doped regions by not forming field oxide or trenches in those specific areas. This extraction of the isolation structure allows light to transmit through the substrate without being blocked by the isolation barriers, while maintaining manufacturing precision through selective masking during the fabrication process.
Solution Approach 2:
The patent applies different structural qualities to different regions: isolation barriers are formed in some areas to provide lateral isolation, while deliberately omitting isolation barriers in specific regions between doped implanted regions to allow light transmission. This local differentiation resolves the contradiction by optimizing each region for its specific function.
2Reliability
If gate structures are formed between implanted regions to control device operation, then device control and reliability are improved, but light transmission is inhibited
Solution Approach 1:
The patent removes gate structures from specific regions where light transmission is desired. By not forming gate electrodes and associated insulation layers in those areas, light can pass through without being blocked, while gate structures are retained in other regions where device control is necessary.
Solution Approach 2:
The patent segments the device structure into functional zones: regions with gate structures for device control and regions without gate structures for light transmission. This segmentation allows both functions to coexist by spatially separating their requirements.
3Productivity
If sandwiched configuration of immediately adjacent doped regions is used to form light emitting devices, then device integration and productivity are improved, but isolation barriers inhibit punch-through and reach-through modes reducing electroluminescence efficiency
Solution Approach 1:
The patent extracts isolation barriers from the sandwiched configuration between immediately adjacent doped regions. By removing field oxide or trench isolation in these specific areas, punch-through and reach-through modes can occur, enabling efficient electroluminescence while maintaining the integrated sandwiched structure for high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves external quantum efficiency by eliminating light inhibition structures, allowing for better carrier injection and distribution of electric fields, thereby increasing the chances of successful punch-through and reach-through operations, enhancing electroluminescence effects.
Implementation Method 1
enhancing electroluminescence effects
Implementation Method 2
allowing for better carrier injection and distribution of electric fields, thereby increasing the chances of successful punch-through and reach-through operations
Implementation Method 3
allowing for better carrier injection and distribution of electric fields, thereby increasing the chances of successful punch-through and reach-through operations
Data Source
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AI summary
A light emitting device (10) comprises a body (11) comprising a substrate (12) of a p-type semiconductor material. The substrate has an upper surface (14) and having formed therein on one side of the upper surface and according to a bulk semiconductor fabrication process utilizing lateral active area isolation techniques: a first n+-type island (16) to form a first junction (24) between the first island and the substrate; and a second n+ - type island (18) spaced laterally from the first island (16). The substrate provides a laterally extending link (20) between the islands having an upper surface. The upper surface of the link, an upper surface of the island (16) and an upper surface of the island (18) collectively form a planar interface (21) between the body (11) and an isolation layer (19) of the device. The device comprises a terminal arrangement to apply a reverse bias to the first junction, to cause the device to emit light. The device is configured to facilitate the transmission of the emitted light.