Silicon-Based Mask With Dual Etching Rates
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Solution Overview
Problem
Existing silicon-based masks for high-resolution display products face challenges in achieving ultra-high resolution while maintaining low manufacturing costs and high efficiency, due to difficulties in etching uniformity and preventing over-etching.
Innovation Solution
A silicon-based mask comprising a first silicon wafer with a higher etching rate and a second silicon wafer with a lower etching rate, laminated one on another, where the second wafer acts as an automatic stop layer to prevent over-etching and improve manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single silicon wafer is used for mask manufacturing, then the manufacturing process is simple, but etching uniformity is poor and over-etching cannot be prevented
Solution Approach 1:
The mask is divided into two separate silicon wafers (first silicon wafer and second silicon wafer) with different etching rates. The first silicon wafer has a higher etching rate and forms the first via hole, while the second silicon wafer has a lower etching rate and forms the second via hole. This segmentation allows each wafer to be etched with appropriate control, preventing over-etching and improving etching uniformity while maintaining manufacturing simplicity.
2Manufacturing precision
If ultra-high resolution is achieved through high-resolution mask, then display quality improves, but manufacturing cost increases
Solution Approach 1:
The invention changes the key parameter of etching rate by using two silicon wafers with different crystal orientations or doping concentrations. The first silicon wafer uses a higher etching rate parameter to efficiently form via holes, while the second silicon wafer uses a lower etching rate parameter to prevent over-etching. This parameter optimization enables ultra-high resolution mask manufacturing with controlled costs by reducing material waste and rework.
3Productivity
If etching rate is increased to improve manufacturing efficiency, then productivity improves, but over-etching occurs and precision deteriorates
Solution Approach 1:
The invention creates a dynamic etching process where the etching rate is adjusted in stages. The first silicon wafer is etched at a higher rate to quickly form via holes, improving productivity. Then the second silicon wafer is etched at a lower rate to precisely control the etching depth and prevent over-etching. This dynamic adjustment of etching rates across different stages maintains both high manufacturing efficiency and precise etching control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed silicon-based mask enables high-efficiency and high-yield manufacturing of display panels with ultra-high resolution, while reducing production costs by utilizing monocrystalline silicon materials and optimizing etching processes.
Implementation Method 1
under a same etching condition, an etching rate of the second silicon wafer is smaller than an etching rate of the first silicon wafer
Data Source
AI summary
The present disclosure provides a silicon-based mask, a manufacturing method, and a display panel. The silicon-based mask includes a first silicon wafer and a second silicon wafer laminated one on another. The first silicon wafer includes a first via hole, the second silicon wafer includes a second via hole, an orthogonal projection of a wall of the first via hole onto the second silicon wafer surrounds the second via hole, and under a same etching condition, an etching rate of the second silicon wafer is smaller than an etching rate of the first silicon wafer.