Silicon Monomer Turbidity Control for Ultrafine Pattern Scum Defects
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Solution Overview
Problem
In semiconductor device manufacturing, the increasing demand for finer patterns and improved etching resistance leads to scum defects in ultrafine patterns, particularly in line-and-space patterns with line widths of 50 nm or less and hole patterns with diameters of 50 nm or less, when using resins with silicon atoms.
Innovation Solution
A pattern forming method using a resin composition with a monomer having a silicon atom and a turbidity of 1 ppm or less, incorporating a silsesquioxane structure and acid-decomposable groups, and employing a developing step with an organic solvent to enhance scum defect performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a resin having a silicon atom is employed to improve etching resistance, then etching resistance is improved, but scum defects appear in ultrafine patterns
Solution Approach 1:
The patent changes the purity parameter of the silicon-containing monomer by controlling the turbidity to 1 ppm or less. This parameter change eliminates scum defects while preserving the etching resistance provided by the silicon atoms in the resin structure.
Solution Approach 2:
The patent applies local quality by specifically controlling the purity of the silicon-containing monomer in the resin composition. By ensuring the monomer has turbidity of 1 ppm or less, the patent locally improves the quality of the resin material at critical points where scum defects would form, while maintaining the overall etching resistance properties.
2Manufacturing precision
If the line width is reduced to 50 nm or less for finer patterns, then manufacturing precision is improved, but scum defects are generated
Solution Approach 1:
The patent changes the purity parameter of the resin composition by specifying monomers with turbidity of 1 ppm or less. This parameter change enables the formation of ultrafine patterns with line widths of 50 nm or less without generating scum defects, thus achieving both high manufacturing precision and pattern reliability.
3Manufacturing precision
If the hole diameter is reduced to 50 nm or less for finer patterns, then manufacturing precision is improved, but scum defects are generated
Solution Approach 1:
The patent changes the purity parameter of the silicon-containing monomer to turbidity of 1 ppm or less. This parameter change enables the formation of ultrafine hole patterns with diameters of 50 nm or less while preventing scum defect generation, achieving both precise hole dimension control and pattern reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly improves scum defect performance in forming ultrafine patterns by reducing impurities and enhancing the etching resistance of the resin, allowing for precise and reliable pattern formation in semiconductor devices.
Implementation Method 1
a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system
Implementation Method 2
an exposing step of irradiating the film with actinic rays or radiation; and a developing step of developing the film irradiated with actinic rays or radiation
Data Source
AI summary
Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.