Silicon Nitride Layer Tensile Stress via HDPCVD
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for enhancing carrier mobility in n-type metal oxide semiconductor (NMOS) devices, such as using contact etch stop layers, are inefficient and require lengthy processes like UV curing, which are not time-effective and may not adequately increase tensile stress for improved device performance.
Innovation Solution
A method involving the use of high density plasma chemical vapor deposition (HDPCVD) treatment to form and stress a silicon nitride layer, which is applied to the contact etch stop layer in NMOS devices, increasing tensile stress and reducing processing time compared to traditional methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If traditional UV curing method is used to stress the contact etch stop layer, then the tensile stress is increased, but the processing time is excessive and the stress enhancement is insufficient
Solution Approach 1:
The patent changes the stress application method from UV curing to HDPCVD treatment, altering the physical and chemical parameters of the process. The HDPCVD treatment applies plasma-based chemical vapor deposition to generate tensile stress, achieving 10-60% stress enhancement in the silicon nitride layer within minutes, compared to the insufficient and time-consuming UV curing method.
2Stress or pressure
If traditional UV curing method is used to stress the contact etch stop layer, then the tensile stress is increased, but the device performance improvement is inadequate
Solution Approach 1:
The patent changes the stress application method from UV curing to HDPCVD treatment, altering the physical and chemical parameters of the process. The HDPCVD treatment applies plasma-based chemical vapor deposition to generate tensile stress, achieving 10-60% stress enhancement in the silicon nitride layer within minutes, compared to the insufficient and time-consuming UV curing method.
3Productivity
If HDPCVD treatment is used to stress the silicon nitride layer, then the tensile stress is significantly increased and processing time is reduced, but the process complexity increases
Solution Approach 1:
The patent utilizes the HDPCVD equipment's multi-functionality to perform both the deposition of the silicon nitride layer and the subsequent stress treatment in the same system. This approach, while using advanced equipment, streamlines the process by eliminating the need for separate stress application equipment and reduces overall processing time, making the enhanced productivity worthwhile despite the equipment complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The HDPCVD treatment effectively increases tensile stress in the silicon nitride layer by 10% to 60%, enhancing carrier mobility and reducing processing time by half compared to traditional UV curing methods, thereby improving NMOS device performance.
Implementation Method 1
the silicon nitride layer is stressed by a high density plasma chemical vapor deposition (HDPCVD) treatment
Data Source
AI summary
A method for manufacturing a silicon nitride layer and a method for manufacturing a semiconductor structure applying the same are provided. The method for manufacturing a silicon nitride layer includes forming the silicon nitride layer and stressing the silicon nitride layer by a high density plasma chemical vapor deposition (HDPCVD) treatment.