Silicon Nitride Capacitor Composition for High-Q Matching Circuits
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices, particularly capacitors used in matching and filter circuits, do not adequately achieve high quality-factor characteristics due to the lack of suitable dielectric films.
Innovation Solution
A semiconductor device is designed with a dielectric film made of silicon nitride, where the atomic concentration ratio of Si to the total amount of Si and N is between 43 atom % and 70 atom %, and a protective layer structure to enhance quality-factor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric films (silicon dioxide, tantalum pentoxide, etc.) are used in semiconductor capacitors, then the device can be manufactured with existing processes, but the quality factor of the capacitor is insufficient for high-performance matching circuits and filter circuits
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric film by specifying silicon nitride with an atomic concentration ratio of Si to (Si+N) between 43-70 atom%. This parameter optimization achieves high quality factor characteristics while maintaining compatibility with existing semiconductor manufacturing processes
Solution Approach 2:
The patent uses silicon nitride as a composite dielectric material that combines the benefits of high dielectric constant with low loss characteristics. The specific composition range (43-70 atom% Si) creates an optimized composite structure that delivers superior quality factor compared to conventional single-material dielectrics
2Reliability
If the atomic concentration ratio of Si in silicon nitride dielectric film is not optimized, then the manufacturing process is simpler, but the quality factor characteristics are degraded
Solution Approach 1:
The patent establishes a specific parameter range for the atomic concentration ratio of Si (43-70 atom%) that optimizes the quality factor. This parameter specification provides clear manufacturing guidance while achieving the desired performance improvement
Solution Approach 2:
The patent implies a feedback mechanism in the manufacturing process by specifying a target range for the atomic concentration ratio. This allows process control and adjustment to maintain the optimal composition range, ensuring consistent high quality factor performance across production batches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves high quality-factor characteristics, effectively improving the performance of matching and filter circuits by optimizing the dielectric film composition and structure.
Implementation Method 1
a first electrode layer 22 provided on the insulating film 21, a dielectric film 23 provided on the first electrode layer 22, and a second electrode layer 24 provided on the dielectric film 23
Implementation Method 2
The dielectric film 23 is made of silicon nitride, and an atomic concentration ratio of Si to a total amount of Si and N contained in the dielectric film 23 is 43 atom % to 70 atom %
Data Source
AI summary
A semiconductor device that includes a substrate; a first electrode layer on the substrate; a dielectric film on the first electrode layer; a second electrode layer on the dielectric film; a protective layer covering the first electrode layer and the second electrode layer; and an outer electrode penetrating the protective layer. The dielectric film includes silicon nitride, and an atomic concentration ratio of Si to a total amount of Si and N contained in the dielectric film is 43 atom % to 70 atom %.