Silicon Nitride Barrier Layer for Hydrogen-Stable Active Substrates
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Solution Overview
Problem
The existing manufacturing processes of electronic devices face challenges in preventing semiconductor materials from being damaged by moisture and hydrogen gas, which can alter the conductivity of semiconductor layers and lead to device failure.
Innovation Solution
An active device substrate is developed with a barrier layer comprising a first and second hydrogen atom distribution region, where the first region includes silicon nitride and has a lower nitrogen concentration and higher hydrogen concentration than the second region, and is formed using a thin film deposition process to prevent hydrogen diffusion into the semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a barrier layer is formed to prevent hydrogen diffusion into the semiconductor layer, then the conductivity stability of the semiconductor layer is improved, but the manufacturing process complexity increases due to the need for controlled hydrogen atom distribution regions with specific nitrogen concentrations
Solution Approach 1:
The barrier layer is designed with non-uniform nitrogen atom concentration distribution, creating a first hydrogen atom distribution region with lower nitrogen concentration and higher hydrogen concentration near the semiconductor layer, and a second hydrogen atom distribution region with higher nitrogen concentration on the outer side. This local variation in composition optimizes hydrogen barrier performance while maintaining manufacturing feasibility through a single deposition process with controlled parameter changes.
Solution Approach 2:
The invention controls the nitrogen atom concentration parameter during the thin film deposition process to create different hydrogen atom distribution regions within the barrier layer. By adjusting deposition parameters such as gas flow ratios or deposition conditions, the nitrogen concentration is varied to achieve the desired hydrogen distribution profile, enabling effective hydrogen barrier performance without requiring multiple deposition steps.
2Reliability
If the concentration of nitrogen atoms is reduced in the first hydrogen atom distribution region to increase hydrogen concentration and improve barrier performance, then the hydrogen blocking capability is enhanced, but the structural stability of the barrier layer may be compromised
Solution Approach 1:
The barrier layer employs local quality variation by creating a first hydrogen atom distribution region with lower nitrogen concentration (higher hydrogen concentration) adjacent to the semiconductor layer for optimal hydrogen blocking, and a second hydrogen atom distribution region with higher nitrogen concentration on the outer side for structural stability and moisture barrier performance. This spatial differentiation of composition optimizes both hydrogen blocking capability and overall layer stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier layer effectively reduces hydrogen diffusion into the semiconductor layer, maintaining its conductivity and preventing damage from moisture and hydrogen, thereby enhancing the manufacturing yield of electronic devices.
Implementation Method 1
The barrier layer includes a first hydrogen atom distribution region and a second hydrogen atom distribution region... The concentration of nitrogen atoms in the first hydrogen atom distribution region is smaller than the concentration of nitrogen atoms in the second hydrogen atom distribution region... The highest concentration of hydrogen atoms in the first hydrogen atom distribution region is greater than the highest concentration of hydrogen atoms in the second hydrogen atom distribution region
Implementation Method 2
forming a barrier layer on the semiconductor layer using a thin film deposition process. The barrier layer includes a first hydrogen atom distribution region and a second hydrogen atom distribution region. The first hydrogen atom distribution region includes silicon nitride and hydrogen atoms
Data Source
AI summary
An active device substrate includes a substrate, an active device and a barrier layer. The active device is located on the substrate. The barrier layer is located on the active device. The barrier layer includes a first hydrogen atom distribution region and a second hydrogen atom distribution region. The first hydrogen atom distribution region includes silicon nitride and hydrogen atom. The first hydrogen atom distribution region is located between the second hydrogen atom distribution region and the substrate. The second hydrogen atom distribution region includes silicon nitride and hydrogen atom. The concentration of nitrogen atom in the first hydrogen atom distribution region is less than the concentration of nitrogen atom in the second hydrogen atom distribution region. The highest concentration of hydrogen atom in the first hydrogen atom distribution region is greater than the highest concentration of hydrogen atom in the second hydrogen atom distribution region.