Silicon Nitride Layer With Nanocrystals For Light Emitting Devices
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Solution Overview
Problem
Conventional methods for forming silicon fine structures in silicon oxide matrices for light emitting devices require high-temperature annealing, which is time-consuming and difficult to integrate with conventional semiconductor processes, and result in the need for thin barrier layers due to high application voltage.
Innovation Solution
A silicon nitride layer with silicon nanocrystals is formed using a chemical vapor deposition process at low temperatures, allowing for direct growth of silicon nanocrystals within a silicon nitride matrix, eliminating the need for high-temperature annealing and enabling control over emission wavelength through silicon source and nitrogen source gas flow rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature annealing is used to form silicon fine structures in silicon oxide matrix, then silicon nanocrystals can be formed, but the process becomes time-consuming and difficult to integrate with conventional semiconductor processes
Solution Approach 1:
The patent changes the formation temperature parameter from high-temperature annealing (1100°C or higher) to low-temperature plasma processing (below 450°C), enabling silicon nanocrystal formation without time-consuming high-temperature treatment while maintaining integration with conventional semiconductor processes
Solution Approach 2:
The patent replaces the thermal annealing mechanism with a plasma-based chemical vapor deposition mechanism, using reactive plasma species to form silicon nanocrystals directly during film deposition rather than through post-deposition thermal treatment
2Manufacturing precision
If high-temperature annealing is used to form silicon fine structures, then quantum confinement effect can be achieved, but additional processes and long processing time are required
Solution Approach 1:
The patent merges the film formation process and silicon nanocrystal formation process into a single low-temperature plasma CVD step, eliminating the need for separate high-temperature annealing processes while achieving the desired quantum confinement effect through controlled plasma parameters
3Illumination intensity
If silicon oxide matrix is used for light emitting device, then light emitting effect can be obtained, but thin barrier layer is required due to high application voltage
Solution Approach 1:
The patent uses a composite structure consisting of silicon nanocrystals embedded in a silicon nitride matrix, where the silicon nitride provides superior electrical barrier properties that reduce the required barrier layer thickness while maintaining effective light emission from the silicon nanocrystals
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of good, uniform silicon nanocrystals at a lower temperature, reducing processing time and achieving high luminous efficiency with tunable emission wavelengths, including the blue and near-infrared regions, without the drawbacks of high-temperature annealing.
Implementation Method 1
growing a silicon nitride matrix and simultaneously forming silicon nanocrystals in the silicon nitride matrix using a silicon source gas and a nitrogen source gas
Implementation Method 2
it is necessary to provoke a quantum confinement effect due to fine structures
Data Source
AI summary
Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.