Silicon Nitride Multilayer for Multi-Die IC Adhesion
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Solution Overview
Problem
Current multi-die IC packaging techniques require a thick silicon nitride layer for adhesion, which causes high stress and increased manufacturing time, making it challenging to assemble multi-die IC packages efficiently.
Innovation Solution
A silicon nitride multilayer is introduced, comprising a thinner silicon nitride layer and a dielectric layer for forming transition vias, reducing manufacturing complexity and cost by addressing adhesion and routing issues in multi-die IC packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a thick silicon nitride layer is used for adhesion, then adhesion strength is improved, but stress on the IC package increases and manufacturing time extends
Solution Approach 1:
The patent divides the single thick silicon nitride layer into multiple thinner silicon nitride layers separated by dielectric layers. This segmentation reduces the stress imposed on the IC package while maintaining the necessary adhesion strength through the combined effect of multiple adhesion interfaces and the stress-distributing dielectric layers.
Solution Approach 2:
The patent creates a composite adhesion structure by combining silicon nitride layers with dielectric layers (such as spin-on-glass or benzocyclobutene). This composite multilayer approach provides both the required adhesion strength and reduced stress by distributing mechanical loads across multiple materials with different mechanical properties.
2Strength
If a thick silicon nitride layer is used for adhesion, then adhesion strength is improved, but deposition and etch times increase
Solution Approach 1:
The patent segments the thick silicon nitride layer into multiple thinner layers, which reduces the total deposition and etch time required. Each thin layer can be deposited and processed more quickly, and the cumulative effect of multiple layers provides the necessary adhesion strength without requiring a single thick layer that would demand extended processing time.
Solution Approach 2:
The patent changes the thickness parameter of the silicon nitride layers from thick to thin, and introduces dielectric layers with different material properties. This parameter change enables faster deposition and etching processes while maintaining adhesion performance through the multilayer configuration.
3Productivity
If a thinner silicon nitride layer is used, then manufacturing time and stress are reduced, but adhesion performance may be compromised
Solution Approach 1:
The patent employs composite materials by combining thin silicon nitride layers with dielectric layers to achieve the necessary adhesion performance. The dielectric layers (such as spin-on-glass or benzocyclobutene) provide additional adhesion contribution and mechanical support, compensating for the reduced thickness of individual silicon nitride layers while enabling faster manufacturing.
Solution Approach 2:
The dielectric layers in the multilayer structure serve multiple functions: they provide adhesion support, distribute stress, enable transition vias for routing, and facilitate the overall assembly process. This multi-functionality allows thin silicon nitride layers to maintain adequate adhesion performance while reducing manufacturing time and stress.
Data Source
AI summary
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a first material layer on the first surface of the first die, the first material layer including silicon and nitrogen; a second material layer on the first material layer, the second material layer including a photoimageable dielectric; conductive vias through the first and second material layers, wherein respective ones of the conductive vias are electrically coupled to respective ones of the second conductive contacts on the first die; and a second die in a second layer, wherein the second layer on the first layer, and wherein the second die is electrically coupled to the second conductive contacts on the first die by the conductive vias.