Silicon Nitride Opening Enlargement via Dual-Temperature Ion Implantation
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Solution Overview
Problem
Conventional etching processes struggle to create precisely dimensioned, nanometer-scale openings in semiconductor device layers, leading to undesired variations that affect device performance, and modifying these dimensions post-etching is not feasible.
Innovation Solution
A method involving sequential ion implantation processes at varying temperatures and angles, followed by a wet etch process, is used to selectively modify the etch rates of silicon nitride layers, allowing precise control over feature dimensions in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes are used to create nanometer-scale openings in hardmask layers, then the etching process can be completed, but the dimension precision of the openings deteriorates due to undesired variations
Solution Approach 1:
The patent applies parameter changes by performing ion implantation at different temperatures (first temperature followed by a second, lower temperature) to modify the etch rate of the hardmask layer. This temperature-based parameter modification allows precise control over the lateral dimensions of openings, enabling sub-5nm precision that conventional etching cannot achieve alone.
Solution Approach 2:
The patent employs preliminary action by performing ion implantation on the hardmask layer before the final etching step. This pre-treatment modifies the etch rate of specific regions, allowing subsequent etching to produce openings with precisely controlled dimensions that cannot be achieved by etching alone.
2Manufacturing precision
If sequential ion implantation processes at different temperatures are performed to modify etch rates, then manufacturing precision of features is improved, but process complexity increases
Solution Approach 1:
The patent utilizes parameter changes by varying ion implantation temperature as the key control parameter. By performing implantation at a first temperature followed by a second, lower temperature, the process selectively modifies etch rates in different regions, achieving nanometer-scale precision while maintaining a relatively simple process structure that can be integrated into existing fabrication lines.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of semiconductor device features with nanometer-scale precision while maintaining high throughput and cost-effectiveness.
Implementation Method 1
performing a first ion implantation process on the silicon nitride layer at a first temperature, performing a second ion implantation process on the silicon nitride layer at a second temperature lower than the first temperature
Implementation Method 2
performing a wet etch process on the silicon nitride layer, wherein a portion of the silicon nitride layer implanted by the second ion implantation process is preferentially removed from the silicon nitride layer
Data Source
AI summary
A method for modifying dimensions of features in semiconductor devices, including providing a semiconductor device layer stack including a photoresist layer disposed atop a silicon nitride layer, the photoresist layer having an opening formed therein, performing an ion etching process on the layer stack, wherein an ions pass through the opening in the photoresist layer and etch a corresponding opening in the silicon nitride layer, removing the photoresist layer from the silicon nitride layer, performing a first ion implantation process on the silicon nitride layer at a first temperature, performing a second ion implantation process on the silicon nitride layer at a second temperature lower than the first temperature, and performing a wet etch process on the silicon nitride layer, wherein a portion of the silicon nitride layer implanted by the second ion implantation process is preferentially removed from the silicon nitride layer.