Silicon Nitride Moisture Barrier for TSV Reliability
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Solution Overview
Problem
The integration of through silicon vias (TSVs) in semiconductor devices requires additional structures like through holes and insulating layers, which can degrade the reliability of the semiconductor chip if not properly managed, especially under temperature humidity storage tests due to moisture absorption and stress generation.
Innovation Solution
A semiconductor device structure that includes a silicon nitride layer sandwiched between the silicon oxide layer and the semiconductor layer, along with a conductive layer, to prevent moisture permeation and reduce stress, enhancing the reliability of the TSV structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a through hole and insulating layer are introduced to enable TSV electrical connection, then mounting area is reduced and circuit board can be miniaturized, but reliability degrades due to moisture absorption and stress generation
Solution Approach 1:
The patent applies composite materials by introducing a silicon nitride layer combined with silicon oxide layer to form a multi-layer insulating structure. This composite structure provides both electrical insulation and moisture barrier functions, preventing moisture absorption and stress generation that would otherwise degrade reliability while enabling TSV electrical connection through the silicon layer.
Solution Approach 2:
The silicon nitride layer acts as an intermediary between the silicon oxide layer and the external environment. It serves as a moisture barrier that prevents moisture from reaching the silicon oxide layer and causing swelling, thereby mediating the protection of the underlying semiconductor structures while allowing the TSV configuration to reduce mounting area.
2Reliability
If silicon oxide layer is used for insulating TSVs from silicon layer, then electrical insulation is provided, but moisture absorption causes swelling and stress generation that degrades reliability
Solution Approach 1:
The silicon nitride layer serves as an intermediary moisture barrier positioned between the environment and the silicon oxide layer. It prevents moisture from penetrating to the silicon oxide layer, thereby protecting it from absorption-induced swelling and stress generation while maintaining the electrical insulation function.
Solution Approach 2:
The patent uses a composite structure combining silicon nitride layer and silicon oxide layer. The silicon nitride provides moisture barrier properties while the silicon oxide provides electrical insulation, creating a multi-functional composite that simultaneously addresses both requirements without compromising reliability.
3Reliability
If additional structures like through hole and insulating layer are introduced, then TSV electrical connection is enabled, but device complexity increases
Solution Approach 1:
The patent merges multiple functions into the insulating layer structure. The silicon nitride layer and silicon oxide layer together provide both electrical insulation and moisture barrier functions, as well as mechanical stress relief. This consolidation of functions into a integrated multi-layer structure enables TSV electrical connection while managing complexity through functional integration rather than separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon nitride layer effectively suppresses moisture absorption and swelling of the silicon oxide layer, thereby improving the reliability of the semiconductor device by increasing its resistance to temperature humidity storage tests without increasing manufacturing costs.
Implementation Method 1
a silicon nitride layer provided on a side of the first plane and in the through hole of the semiconductor layer, the silicon oxide layer being interposed between the silicon nitride layer and the semiconductor layer
Implementation Method 2
the silicon nitride layer effectively suppresses moisture absorption and swelling of the silicon oxide layer, thereby improving the reliability of the semiconductor device
Data Source
AI summary
A semiconductor device of an embodiment includes a semiconductor layer having a first plane, a second plane, and a through hole penetrating from the first plane to the second plane; an insulating layer on a side of the second plane of the semiconductor layer; a first conductive layer in the insulating layer; a silicon oxide layer on a side of the first plane and in the through hole; a silicon nitride layer provided on the side of the first plane and in the through hole, the silicon oxide layer being interposed between the silicon nitride layer and the semiconductor layer; and a second conductive layer on the side of the first plane and in the through hole, the silicon oxide layer and the silicon nitride layer being interposed between the second conductive layer and the semiconductor layer, and the second conductive layer electrically connected to the first conductive layer.