Ultra-Thin Silicon Nucleation Layer for Carbon-Based Dielectric Coating

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Solution Overview

Problem

Carbon-based materials like graphene are chemically inert, making it difficult to achieve a uniform thin coating of high-k dielectrics, which often results in clumping or excessive thickness, and conventional methods like nitrogen dioxide exposure degrade device performance.

Innovation Solution

Depositing an ultra-thin silicon nucleation layer on the carbon-based material to facilitate a uniform coating of high-k dielectrics, using techniques such as low-pressure PECVD or MBE, and creating a neutral charge state in the silicon layer to prevent interface trap charges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If more material is deposited to achieve complete coverage, then uniform coating is improved, but layer thickness becomes too thick for some applications

Engineering Contradiction:

Improveuniform coatingVSAvoidlayer thickness

Core Design Contradiction:

Manufacturing precisionVSLength of stationary object

Solution Approach 1:

An ultra-thin silicon nucleation layer (2-10 Å) is deposited beforehand on the carbon-based material surface to prepare it for subsequent high-k dielectric deposition. This preliminary silicon layer provides nucleation sites that enable complete and uniform coverage of the high-k dielectric at reduced thickness (2-100 Å). Without this preliminary action, achieving uniform coverage would require much thicker layers that would be too thick for certain applications.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables complete surface coverage with a thin, uniform coating that maintains the electrical properties of the carbon-based material, improving device performance by minimizing interface trap charges and achieving a stable dielectric layer.

Implementation Method 1

An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

using techniques such as low-pressure PECVD or MBE

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS8895352B2Method to improve nucleation of materials on graphene and carbon nanotubes

Publication Date: 2014.11.25 GLOBALFOUNDRIES US INC

AI summary

Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.