Silicon Oxide Cavity Spectroscopic Sensor
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Solution Overview
Problem
Conventional spectroscopic sensors using resin materials for cavity and coupling layers are prone to degradation due to temperature and humidity changes, leading to instability in form, light transmittance, and refractive index.
Innovation Solution
The use of silicon oxide films for both the cavity and coupling layers, formed through thermal oxidation and TEOS-based film forming processes, stabilizes the sensor's performance and prevents degradation from environmental factors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If resin material is used for the cavity layer and coupling layer, then ease of manufacture is improved, but reliability deteriorates due to degradation from temperature and humidity changes
Solution Approach 1:
The patent changes the material parameter from resin to silicon oxide, which fundamentally alters the chemical and physical properties of the cavity and coupling layers. Silicon oxide provides superior stability against temperature and humidity changes while maintaining manufacturability through established semiconductor fabrication processes
Solution Approach 2:
The patent employs silicon oxide as a composite material solution, utilizing its unique properties as both the cavity layer and coupling layer materials. This material choice creates a stable optical path that resists environmental degradation while allowing for precise control of optical characteristics
2Ease of manufacture
If resin material is used for the cavity layer and coupling layer, then ease of manufacture is improved, but stability of form, light transmittance, and refractive index deteriorates
Solution Approach 1:
The patent changes the material composition parameter from resin to silicon oxide, which provides inherent stability in form, light transmittance, and refractive index. Silicon oxide's crystalline structure and chemical inertness ensure these optical parameters remain constant under varying environmental conditions
Solution Approach 2:
The patent adopts silicon oxide, a material that can be readily deposited using standard semiconductor manufacturing techniques such as CVD or sputtering. This approach replaces expensive and unstable resin materials with a cost-effective, stable inorganic material that maintains optical properties throughout the device lifetime
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of the spectroscopic sensor by maintaining stable light transmission characteristics and preventing damage from temperature and humidity changes, ensuring high-quality performance.
Implementation Method 1
the cavity layer, the coupling layer, and the like may be degraded by changes in temperature, high humidity, and the like of the environment where they are in use
Implementation Method 2
The first coupling layer is also a silicon oxide film and thus can stabilize the transmission characteristic of the light advancing from the light-transmitting substrate to the interference filter unit
Implementation Method 3
The fact that the cavity layer and first coupling layer are silicon oxide films can also prevent their quality from being degraded by changes in temperature, high humidity, and the like of the environment where they are in use
Implementation Method 4
The fact that the cavity layer and first coupling layer are silicon oxide films can also prevent their quality from being degraded by changes in temperature, high humidity, and the like of the environment where they are in use
Implementation Method 5
an optical filter layer, formed on the light-transmitting substrate so as to oppose the first mirror layer, for transmitting therethrough light in the predetermined wavelength range
Data Source
AI summary
A spectroscopic sensor 1 comprises an interference filter unit 20, having a cavity layer 21 and first and second mirror layers 22, 23 opposing each other through the cavity layer 21, for selectively transmitting therethrough light in a predetermined wavelength range according to an incident position thereof; a light-transmitting substrate 3, arranged on the first mirror layer 22 side, for transmitting therethrough light incident on the interference filter unit 20, a light-detecting substrate 4, arranged on the second mirror layer 23 side, for detecting the light transmitted through the interference filter unit 20, and a first coupling layer 11 arranged between the interference filter unit 20 and the light-transmitting substrate 3. The cavity layer 21 and the first coupling layer 11 are silicon oxide films.