Silicon Oxide Film Deposition Using He/O2 Plasma Reforming
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Solution Overview
Problem
Existing deposition methods often result in the formation of seams during the etching process of silicon oxide films embedded in recessed portions, particularly when using Ar/O2 gas as a reformed gas, which affects the film's quality and etching resistance.
Innovation Solution
A deposition method involving the adsorption of aminosilane gas on a substrate, followed by oxidation and a reforming process using plasma-activated He/O2 gas to prevent seam formation, ensuring a dense and high-quality silicon oxide film deposition that resists etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If Ar/O2 gas is used as reformed gas in the deposition process, then the deposition can be completed, but seams are formed during subsequent etching process
Solution Approach 1:
The patent changes the reformed gas composition from Ar/O2 to He/O2, specifically altering the gas type parameter. Helium has a longer mean free path and stronger reforming effect compared to argon, which modifies the physical and chemical properties of the deposited silicon oxide film. This parameter change results in a denser film structure that maintains high etching resistance without forming seams during etching processes.
2Manufacturing precision
If aminosilane gas is adsorbed and oxidized to form silicon oxide film, then the film can be deposited in recessed portions, but the film density and bonding are insufficient
Solution Approach 1:
The patent applies a preliminary reforming process using plasma-activated He/O2 gas before the main deposition process. This preliminary action modifies the surface properties and creates a more favorable environment for subsequent film deposition, ensuring better film density and bonding. The reforming process prepares the substrate and initial film layers to achieve superior structural integrity.
Solution Approach 2:
By changing the reformed gas from Ar/O2 to He/O2, the patent alters the deposition dynamics. Helium's longer mean free path enables better gas penetration into recessed portions while maintaining film density. The stronger reforming effect of He/O2 plasma enhances the bonding between deposited layers, resulting in a dense, well-bonded silicon oxide film that fills recessed portions completely.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents seam formation during subsequent etching processes, enhancing the film's quality and etching resistance by utilizing He/O2 gas's stronger reforming effect and longer mean free path, resulting in a dense and well-bonded silicon oxide film.
Implementation Method 1
causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate
Implementation Method 2
causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate
Implementation Method 3
performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen
Data Source
AI summary
A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.