Silicon Oxide Capacitor Dielectric for High-Q Matching Circuits
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Solution Overview
Problem
Semiconductor devices, particularly capacitors used in matching and filtering circuits, face challenges in achieving high Q-value characteristics due to insufficient research on dielectric films that enhance this parameter.
Innovation Solution
A semiconductor device is designed with a dielectric film made of silicon oxide, where the ratio of three-membered ring structures to four-membered ring structures is 0.46 or less, and includes a substrate, first and second electrode layers, a moisture-resistant film, and protective layers to improve Q-value characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric materials are used in capacitors, then the capacitor can be manufactured with standard materials, but the Q-value is insufficient for high-performance matching and filtering circuits
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric film by specifying exact ratios of metal oxides (SiO2: 50-70 wt%, B2O3: 10-30 wt%, Al2O3: 5-20 wt%) to achieve the desired Q-value characteristics while maintaining manufacturability with conventional ceramic processing techniques
Solution Approach 2:
The patent creates a composite dielectric material by combining multiple metal oxides (silicon oxide, boron oxide, aluminum oxide) in specific proportions to achieve synergistic effects that improve Q-value beyond what single materials can provide, while still using standard manufacturing processes
2Loss of energy
If high-Q dielectric materials are developed, then the Q-value and power efficiency improve, but the manufacturing process becomes more complex
Solution Approach 1:
The patent optimizes the compositional parameters within practical manufacturing ranges (SiO2: 50-70 wt%, B2O3: 10-30 wt%, Al2O3: 5-20 wt%) to minimize dielectric loss while ensuring the material can be processed using conventional ceramic fabrication methods, avoiding excessive complexity
Solution Approach 2:
The patent focuses the compositional optimization specifically on the dielectric film layer where it is most needed for Q-value improvement, while keeping other capacitor components and manufacturing steps relatively simple and conventional
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves high Q-value characteristics, reducing dielectric loss and power consumption in matching and filtering circuits, with significant improvement when the ratio of three-membered rings to four-membered rings is less than 0.44, leading to enhanced performance and efficiency.
Implementation Method 1
a dielectric film on the first electrode layer, the dielectric film containing silicon oxide, and a ratio of three-membered ring structures to four-membered ring structures in the silicon oxide is 0.46 or less
Data Source
AI summary
A semiconductor device that includes a substrate; a first electrode layer on the substrate; a dielectric film on the first electrode layer, the dielectric film containing silicon oxide, and a ratio of three-membered ring structures to four-membered ring structures in the silicon oxide is 0.46 or less; a second electrode layer on the dielectric film; a protective layer covering the first electrode layer and the second electrode layer, and outer electrodes piercing the protective layer.