Silicon Oxide Lamination Cycles for Precise Film Thickness Control
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving precise control over film thickness uniformity and controllability during the formation of films on substrates, particularly in the lamination of silicon oxide layers, where temperature variations and gas supply conditions affect the deposition rates and film quality.
Innovation Solution
A method involving alternating cycles of supplying a silane source and an oxidizing agent at specific temperatures, with the inclusion of a catalyst, to form a first and second layer on a substrate, where each cycle is performed under conditions that prevent thermal decomposition of the gases, allowing for precise control of film thickness by adjusting the temperature and cycle rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single temperature condition is used for film formation, then the process is simple, but film thickness controllability is poor
Solution Approach 1:
The film formation process is divided into multiple cycles, each cycle consisting of source supply and reactant supply steps performed at different temperatures. This segmentation allows independent control of deposition rate and film properties, resolving the contradiction between precision and complexity.
Solution Approach 2:
The patent employs periodic alternation between different temperature conditions within each cycle. The substrate temperature is periodically changed between a first temperature (during source supply) and a second temperature (during reactant supply), enabling precise control over film thickness and composition through cyclic thermal variation.
2Productivity
If temperature is increased to improve deposition rate, then productivity increases, but thermal decomposition of gases occurs
Solution Approach 1:
The patent uses periodic temperature variation within each cycle to achieve high deposition rates without thermal decomposition. During source supply, the substrate is heated to a first temperature that promotes deposition; during reactant supply, the temperature is adjusted to a second temperature that prevents gas decomposition while maintaining reaction efficiency.
Solution Approach 2:
The substrate temperature is dynamically adjusted during the film formation process, changing between different temperature levels at different stages of each cycle. This dynamic temperature control allows the system to optimize both deposition rate and gas stability throughout the process, rather than maintaining a fixed temperature.
3Manufacturing precision
If multiple temperature conditions are used in cycles, then film thickness controllability improves, but processing time increases
Solution Approach 1:
The patent implements a cyclic process where each cycle includes source supply and reactant supply steps performed at different temperatures. By optimizing the duration and temperature parameters of each cycle, the process achieves high film thickness uniformity while maintaining efficient processing speed, preventing excessive time loss despite the multi-temperature approach.
Solution Approach 2:
The cyclic process design ensures continuous useful action throughout the film formation. Both source and reactant supply steps contribute to film deposition, with no idle periods. The alternating temperature conditions are maintained continuously across multiple cycles, maximizing productivity while achieving precise thickness control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances film thickness controllability and uniformity, improving the reproducibility and productivity of the semiconductor device manufacturing process by allowing for precise adjustment of film thickness without compromising in-plane film thickness uniformity.
Implementation Method 1
forming a first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: (a-1) supplying a source to the substrate, and (a-2) supplying a reactant to the substrate
Implementation Method 2
A method involving alternating cycles of supplying a silane source and an oxidizing agent at specific temperatures, with the inclusion of a catalyst, to form a first and second layer on a substrate
Data Source
AI summary
A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.