Silicon Oxide Film Formation on Metal Surfaces
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Solution Overview
Problem
Conventional methods for forming silicon oxide films on substrates with metal surfaces require a barrier layer to prevent oxidation, increasing manufacturing steps and potentially deteriorating electric characteristics due to high tensile stress in nitride films.
Innovation Solution
A CVD method and apparatus that alternately supply Si-containing, oxidizing, and deoxidizing gases to form silicon oxide films, preventing metal surface oxidation without the need for a barrier layer, by controlling gas supply in specific steps to suppress oxidation and promote film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a barrier layer is formed on the metal surface before forming the silicon oxide film, then the metal surface is prevented from being oxidized, but the number of manufacturing steps increases and the electric characteristics may deteriorate due to high tensile stress in the nitride film
Solution Approach 1:
The invention applies preliminary action by forming a thin silicon oxide film (5-10 nm) on the metal surface before forming the main silicon oxide film. This preliminary silicon oxide film serves as the protective barrier layer, eliminating the need for a separate nitride barrier layer. The silicon oxide film is formed by CVD using Si-containing gas and oxidizing gas, creating a protective layer that prevents metal oxidation during subsequent processing steps.
Solution Approach 2:
The invention changes the material parameter of the barrier layer from nitride film to silicon oxide film. By using silicon oxide instead of nitride, the high tensile stress problem is eliminated while maintaining the protective function. The formation conditions are also changed by using CVD process with specific gas combinations (Si-containing gas + oxidizing gas) at controlled temperatures to form the silicon oxide barrier layer in situ.
2Reliability
If a barrier layer is formed on the metal surface before forming the silicon oxide film, then the metal surface is prevented from being oxidized, but the electric characteristics may deteriorate due to high tensile stress in the nitride film
Solution Approach 1:
The invention applies preliminary action by forming a thin silicon oxide film (5-10 nm) on the metal surface before forming the main silicon oxide film. This preliminary silicon oxide film serves as the protective barrier layer, eliminating the need for a separate nitride barrier layer. The silicon oxide film is formed by CVD using Si-containing gas and oxidizing gas, creating a protective layer that prevents metal oxidation during subsequent processing steps.
Solution Approach 2:
The invention changes the material parameter of the barrier layer from nitride film to silicon oxide film. By using silicon oxide instead of nitride, the high tensile stress problem is eliminated while maintaining the protective function. The formation conditions are also changed by using CVD process with specific gas combinations (Si-containing gas + oxidizing gas) at controlled temperatures to form the silicon oxide barrier layer in situ.
3Productivity
If conventional CVD method is used to form silicon oxide film on metal surface, then the film formation process is simple, but the metal surface is oxidized and electric characteristics deteriorate
Solution Approach 1:
The invention applies preliminary action by forming a thin silicon oxide film (5-10 nm) on the metal surface before forming the main silicon oxide film. This preliminary silicon oxide film serves as the protective barrier layer, eliminating the need for a separate nitride barrier layer. The silicon oxide film is formed by CVD using Si-containing gas and oxidizing gas, creating a protective layer that prevents metal oxidation during subsequent processing steps.
Solution Approach 2:
The invention changes the material parameter of the barrier layer from nitride film to silicon oxide film. By using silicon oxide instead of nitride, the high tensile stress problem is eliminated while maintaining the protective function. The formation conditions are also changed by using CVD process with specific gas combinations (Si-containing gas + oxidizing gas) at controlled temperatures to form the silicon oxide barrier layer in situ.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing steps and improves electric characteristics by directly forming silicon oxide films on metal surfaces without preforming a barrier layer, enhancing productivity and reducing stress-related issues.
Implementation Method 1
The present invention relates to a method and apparatus for forming a silicon oxide film by CVD on a target substrate including a metal surface
Implementation Method 2
an oxidizing gas, such as O2 or N2O gas, are supplied from below the process field by a film formation gas supply section 8
Data Source
AI summary
A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with an Si-containing gas, an oxidizing gas, and a deoxidizing gas. This method alternately includes first to fourth steps. The first step is arranged to perform supply of the Si-containing gas to the process field while stopping supply of the oxidizing and deoxidizing gases to the process field. The second step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field. The third step is arranged to perform supply of the oxidizing and deoxidizing gases to the process field at the same time, while stopping supply of the Si-containing gas to the process field. The fourth step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field.