Display Panel Circuit Layout Using Silicon and Oxide Transistors
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Solution Overview
Problem
Current display technologies face challenges in achieving high pixel density (PPI) and desirable display effects, particularly in mobile devices, where existing display panels struggle to optimize the combination of silicon and oxide semiconductor transistors for improved performance and space efficiency.
Innovation Solution
A display panel design incorporating both silicon and oxide semiconductor transistors, where the transistors are optimized in size and placement to maximize pixel density, with silicon transistors having faster carrier mobility and improved responsiveness, and oxide semiconductor transistors being more stable, while minimizing circuit space and enhancing display quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If only silicon transistors are used to achieve fast response, then carrier mobility is improved, but circuit stability deteriorates
Solution Approach 1:
The patent applies local quality by using different semiconductor materials for different transistor types within the same display driver circuit. Specifically, silicon-based transistors are used for switch transistors requiring fast response, while oxide semiconductor transistors are used for drive transistors requiring high stability. This material differentiation at local levels resolves the contradiction between speed and reliability by matching material properties to functional requirements.
2Measurement precision
If pixel density is increased to improve display quality, then PPI is improved, but circuit space becomes insufficient
Solution Approach 1:
The patent changes the physical parameters of the transistor structure, specifically utilizing the thinner film thickness of oxide semiconductor layers (50-200 nm) compared to silicon layers. This parameter change reduces the vertical space occupation of transistors, allowing higher pixel density to be achieved without proportionally increasing the horizontal circuit space requirement.
3Reliability
If oxide semiconductor transistors are used to improve stability, then circuit stability is improved, but carrier mobility deteriorates
Solution Approach 1:
The patent applies local quality by strategically assigning oxide semiconductor transistors to positions where stability is paramount (drive transistors controlling pixel emission) while assigning silicon transistors to positions requiring speed (switch transistors for signal routing). This spatial differentiation of material quality resolves the speed-stability contradiction by ensuring each transistor type operates in its optimal performance regime.
Data Source
AI summary
A display panel and a display device are provided in the present disclosure. The display panel includes a base substrate, a first transistor, a second transistor, a pixel circuit, and a drive circuit. A first active layer of the first transistor includes silicon; and a second active layer of the second transistor includes an oxide semiconductor. A length of a channel region of the first transistor is LL a distance between a first gate electrode and the first active layer is D1, and a first area S1=L1×D1; and a length of a channel region of the second transistor is L2, a distance between a second gate electrode and the second active layer is D2, and a second area S2=L2×D2, where S1<S2. The second transistor is included in the drive circuit, and the first transistor is included in one of the pixel circuit and the drive circuit.