Silicon Oxide Film Deposition Without Plasma Layer Damage
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Solution Overview
Problem
Existing methods for forming oxide films on substrates face challenges in achieving efficient film formation with high uniformity and without causing damage to the underlying layers, particularly when using strong oxidizing sources or plasma processes.
Innovation Solution
A film forming method involving alternating cycles of supplying a first raw material gas containing silicon and a second raw material gas with oxygen and hydroxyl group bonds, such as chlorosilane-based and silanol-based gases, to form a silicon oxide film on a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If strong oxidizing sources or plasma processes are used to form oxide films, then film formation rate is improved, but damage to underlying layers occurs
Solution Approach 1:
The patent changes the chemical parameters of the oxidizing gas from strong oxidants (ozone, nitric oxide) to weak oxidants (oxygen, water vapor), and controls the substrate temperature (200-400°C) to achieve efficient oxide film formation without damaging the underlying layers
Solution Approach 2:
The patent introduces a silane-based compound as an intermediary substance that reacts with the weak oxidizing agents to form silicon oxide, enabling film formation without direct contact between strong oxidants and the substrate, thus preventing damage
2Productivity
If plasma processes are used to form oxide films, then film formation rate is improved, but substrate integrity is compromised
Solution Approach 1:
The patent replaces the plasma physical field with a thermal-chemical field, using heated substrates and chemical reactions instead of plasma to form oxide films, thereby maintaining substrate integrity while achieving film formation
Solution Approach 2:
The patent changes the processing conditions from plasma state to thermal-chemical state by controlling substrate temperature and using chemical vapor deposition, avoiding plasma-induced damage while maintaining film formation efficiency
3Manufacturing precision
If conventional oxide film formation methods are used, then film formation is achieved, but uniformity is poor
Solution Approach 1:
The patent employs periodic alternation between silane gas supply and oxidizing gas supply in cyclic manner, allowing controlled reaction progression that ensures uniform film formation while maintaining efficient production rate
Solution Approach 2:
The patent ensures uniform distribution of reactants across the substrate surface through controlled gas flow and temperature management, achieving consistent film properties throughout the entire substrate area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances film formation rate and uniformity while minimizing damage to underlying layers, particularly those with carbon content, and avoids the need for strong oxidizing sources or plasma, thereby preserving the integrity of the substrate.
Implementation Method 1
supplying a first raw material gas, which contains a predetermined element, to the substrate; supplying a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group
Data Source
AI summary
A film forming method of forming an oxide film, which contains at least a predetermined element and oxygen, on a substrate, includes: (a) supplying a first raw material gas, which contains the predetermined element, to the substrate; (b) supplying a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group, and is different from the first raw material gas, to the substrate; and (c) repeating one cycle a plurality of times, the one cycle including (a) and (b).