Silicon Oxide Batch Deposition with Controlled Oxidation Pressure
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Solution Overview
Problem
Forming silicon oxide films with high productivity and good uniformity is challenging due to the large number of Si—H and Si—CH3 bonds on multiple wafers, requiring excessive oxidizing gas and prolonged oxidation time in batch-type deposition processes.
Innovation Solution
A deposition method using a vertical heat processing apparatus that supplies a silicon material gas containing an organoamino-functionalized oligosiloxane compound and an oxidizing gas at a pressure of 1 Torr to 10 Torr, optimizing the oxidation pressure to enhance film uniformity and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If batch-type deposition process is used to form silicon oxide films on multiple wafers, then productivity is improved, but oxidation time becomes excessively long due to large number of Si-H and Si-CH3 bonds
Solution Approach 1:
The patent changes the oxidation pressure parameter to a specific range (1-10 Torr) to optimize the oxidation process. This parameter modification enables faster oxidation kinetics while maintaining film quality, thereby reducing oxidation time and improving productivity without sacrificing film uniformity
2Productivity
If batch-type deposition process is used to form silicon oxide films on multiple wafers, then productivity is improved, but uniformity of film thickness deteriorates
Solution Approach 1:
The patent optimizes oxidation pressure to a specific range (1-10 Torr) to achieve uniform film thickness across multiple wafers. This parameter control ensures consistent oxidation rates throughout the batch process, maintaining manufacturing precision while enabling high productivity through batch processing
3Reliability
If excessive oxidizing gas is supplied to oxidize Si-H and Si-CH3 bonds on multiple wafers, then oxidation is improved, but process time and gas consumption increase
Solution Approach 1:
The patent modifies the oxidation pressure parameter to 1-10 Torr, which optimizes the balance between oxidation completeness and process efficiency. This pressure range enables sufficient oxidizing gas penetration and reaction while preventing excessive gas consumption and unnecessary time extension
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves good within-wafer and wafer-to-wafer uniformity of silicon oxide films with high productivity by adjusting the oxidation pressure, reducing the time required for oxidation and gas purging, while maintaining film quality.
Implementation Method 1
supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container
Implementation Method 2
supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr
Data Source
AI summary
A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).